| AVS 53rd International Symposium | |
| Manufacturing Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-TuA1 Invited Paper Physics of Stress-Induced Performance Gain in Advanced MOSFET Devices M.D. Giles, S.M. Cea, T. Ghani, R. Kotlyar, P. Matagne, K. Mistry, B. Obradovic, R. Shaheed, L. Shifren, M.A. Stettler, S. Tyagi, X. Wang, C. Weber, Intel Corporation |
| 2:40pm | MS-TuA3 Defect Engineering by Short-Annealing-Time Methods for Ultrashallow Junction Formation E.G. Seebauer, C.T.M. Kwok, R. Vaidyanathan, University of Illinois at Urbana-Champaign |
| 3:00pm | MS-TuA4 Virtual Integrated Processing for IC Manufacturing R. Chalupa, D.G. Thakurta, L. Jiang, H. Simka, S. Shankar, Intel Corporation |
| 3:20pm | MS-TuA5 Invited Paper Semiconductor Materials Challenges and Opportunities for Energy Efficient Power Conversion Technologies M.A. Briere, International Rectifier |
| 4:00pm | MS-TuA7 Electrochemical Planarization of Copper Surfaces with Sub-Micron Features R. Chalupa, A.N. Andryushchenko, J. Han, T. Ghosh, S. Shankar, P. Fischer, Intel Corporation |
| 4:20pm | MS-TuA8 Large-Scaled Line Plasma Production by Evanescent Microwave in a Narrow Rectangular Waveguide E. Abdel Fattah, S. Fijii, ADTEC Plasma Technology Co. LTD, Japan, H. Shindo, Tokai University, Japan |
| 4:40pm | MS-TuA9 Innovative Studies for Ultra High Aspect Ratio Deep Trench Etch S. Pamarthy, F. Ameri, D. Gutierrez, D. Scanlan, F. Schaeftlein, Applied Materials |