AVS 53rd International Symposium
    Manufacturing Science and Technology Tuesday Sessions
       Session MS-TuA

Invited Paper MS-TuA1
Physics of Stress-Induced Performance Gain in Advanced MOSFET Devices

Tuesday, November 14, 2006, 2:00 pm, Room 2018

Session: Process Integration and Modeling for Nano-scale Semiconductor Devices
Presenter: M.D. Giles, Intel Corporation
Authors: M.D. Giles, Intel Corporation
S.M. Cea, Intel Corporation
T. Ghani, Intel Corporation
R. Kotlyar, Intel Corporation
P. Matagne, Intel Corporation
K. Mistry, Intel Corporation
B. Obradovic, Intel Corporation
R. Shaheed, Intel Corporation
L. Shifren, Intel Corporation
M.A. Stettler, Intel Corporation
S. Tyagi, Intel Corporation
X. Wang, Intel Corporation
C. Weber, Intel Corporation
Correspondent: Click to Email
Stress-enhanced MOSFET channel mobility has become a key enabler for continued performance improvement in advanced silicon technologies. First introduced at the 90nm node,@footnote 1@ strain engineering is now being widely adopted for 65nm technologies and beyond, and gives a new degree of freedom in delivering improvements in transistor speed and power. Although the piezoresistance effect in silicon has been known for fifty years and biaxial strained silicon investigated for more than a decade, the large mobility gains possible with a dominantly uniaxial strain quickly raised the importance of fundamental understanding of device stress effects, particularly for PMOS. Developing technologies that utilize stress sources similarly requires an understanding of how materials interact to produce a channel stress distribution in the final device. This presentation will review the key physical effects at the process and device levels that contribute to stress-induced performance gain. Through the use of physically-based models of material properties, device fabrication, and device operation, the basis of stress-induced performance gains will be demonstrated and the performance differences between alternative stress configurations explained. @FootnoteText@ @footnote 1@T.Ghani, et al, IEDM Technical Digest, p. 978 (2003).