| AVS 52nd International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:40am | PS-WeM2 Ta Based Metal Gate Etch for Dual Metal Gate CMOS Applications C.H. Huffman, Z. Zhang, Texas Instruments Assignee to SEMATECH, S.C. Song, SEMATECH |
| 9:00am | PS-WeM3 Invited Paper Challenges in Plasma Processing for Advanced Gate Stack Fabrication B.-W. Chan, Y.-H. Chiu, Taiwan Semiconductor Manufacturing Corp., E. Luckowski, B. Goolsby, S. Rauf, P.J. Stout, B. White, P. Tobin, Freescale Semiconductor, H.-J. Tao, S.-M. Jang, M.-S. Liang, Taiwan Semiconductor Manufacturing Corp. |
| 9:40am | PS-WeM5 Challenges in Plasma Etching of Metal Gate Stacks A. Le Gouil, STMICROELECTRONICS, E. Richard, T. Chevolleau, G. Cunge, O. Joubert, L. Vallier, LTM (CNRS), France |
| 10:00am | PS-WeM6 Investigation of Fluorocarbon Polymer Formation in Polysilicon Etching on Metal Gate E. Luckowski, Freescale Semiconductor, Inc., B.W. Chan, TSMC, S. Rauf, A. Martinez, Freescale Semiconductor, Inc. |
| 10:20am | PS-WeM7 Ion-Enhanced Plasma Etching of Metal Oxides in Chlorine Based Plasma R.M. Martin, University of California, Los Angeles, H.O. Blom, Uppsala University, Sweden, M. Sawkar, J.P. Chang, University of California, Los Angeles |
| 10:40am | PS-WeM8 ICP Etching of p-type Conducting Materials with High Work Function for CMOS Application W.S. Hwang, Y.Q. Wang, W.J. Yoo, National University of Singapore, V.N. Bliznetsov, Institute of Microelectronics, Singapore |
| 11:00am | PS-WeM9 Damage-free MOS Gate Electrode Patterning on Thin HfSiON Film Using a Neutral Beam Etching S. Noda, T. Ozaki, S. Samukawa, Tohoku University, Japan |
| 11:20am | PS-WeM10 Evaluation of Several Plasma Etching and Boron Cleaning Processes for Hafnium Oxide Thin Films on Silicon C. Wang, V.M. Donnelly, University of Houston |
| 11:40am | PS-WeM11 Damage-free Ultrathin Oxynitride Films Formed Using Pulse-Time-Modulated Nitrogen Plasma S. Fukuda, C. Taguchi, Y. Kato, Y. Ishikawa, S. Noda, S. Samukawa, Tohoku University, Japan |