| AVS 52nd International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-MoP1 Minimum Area Required for Poly Etch Endpoint Detection R.L. Hill, National Semiconductor |
| PS-MoP2 Optical Second Harmonic Generation during Ar@sup +@ Etching of Silicon P.M. Gevers, A.A.E. Stevens, J.J.H. Gielis, H.C.W. Beijerinck, M.C.M. Van De Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
| PS-MoP3 The Study of Atomic Layer Etching Mechanism for Si with Various Substrate Orientations S.D. Park, C.K. Oh, M.S. Kim, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS-MoP4 The Effect of Oxide Thickness on Photoemission and Photoconduction Currents during VUV Irradiation J.L. Lauer, J.L. Shohet, G.S. Upadhyaya, University of Wisconsin-Madison |
| PS-MoP5 Reduction of Gate Oxide Plasma Induced Damage via Silicon Nitride Backside Film H. McCulloh, C. Bossie, P. Allard, J. Garmon, C. Printy, National Semiconductor |
| PS-MoP7 Study of the Plasma-Induced Damage by Inductively Coupled Plasma in Pb(Zr,Ti)O@sub 3@ for FeRAM(Ferroelectric Random Acess Memory) Devices H.Y. Ko, K.R. Byun, Y.J. Jung, D.H. Im, D.C. Yoo, S.H. Joo, J.H. Ham, S.H. Park, H.S. Kim, K.K. Chi, C.J. Kang, H.K. Cho, U.I. Jung, J.T. Moon, Samsung Electronics, South Korea |
| PS-MoP8 Effective Stripping of Heavily Implanted Photoresist by Insitu-Bake Process S.-K. Yang, Inha University, Korea, J. Yang, PSK Inc., S.G. Park, Inha University, Korea |
| PS-MoP9 Plasma Etching of High-k and Metal Gate Materials in High-Density Chlorine-Containing Plasmas K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, K. Ono, Kyoto University, Japan |
| PS-MoP10 Effects of Non-Volatility of Etch Products on Surface Roughness during Etching of Advanced Gate Stack Materials W.S. Hwang, W.J. Yoo, National University of Singapore |
| PS-MoP11 Highly Selective W/WN/Poly-Si Etching by using RLSA Microwave Plasma Source T. Nishizuka, K. Song Yun, K. Ishibashi, T. Nozawa, Tokyo Electron, LTD., Japan, T. Goto, T. Ohmi, Tohoku Univ., Japan |
| PS-MoP12 Extremely Thin Silicon Oxide Formation Using Pulse-Time-Modulated Oxygen Neutral Beam C. Taguchi, S. Fukuda, S. Noda, S. Samukawa, Tohoku University, Japan |
| PS-MoP14 A Comparative Study on Dry Etching of TaN/HfO@sub 2@ Gate Stack Structure in Inductively Coupled Plasmas using Cl@sub 2@, BCl@sub 3@, and HBr Chemistries M.H. Shin, M.S. Park, N.-E. Lee, Sungkyunkwan University, Korea, J.Y. Kim, Kookmin University, Korea |
| PS-MoP15 Etching of Titanium Nitride D. Wu, B. Ji, E.J. Karwacki, Air Products and Chemicals, Inc. |
| PS-MoP16 Etching of Narrow Porous SiOCH Trenches using a TiN Metallic Hard Mask M. Darnon, CNRS LTM - France, N. Posseme, ST Microelectronics - France, D. Eon, UJF - France, T. David, CEA LETI - France, T. Chevolleau, L. Vallier, O. Joubert, CNRS LTM - France |
| PS-MoP17 A Stacked Mask Process (S-MAP) for Precise CD Control using 100 MHz CCP RIE H. Hayashi, J. Abe, A. Kojima, I. Sakai, T. Ohiwa, Toshiba Corporation, Japan |
| PS-MoP18 Characterization Methodologies for Unsaturated 1,3-C4F6 Plasma used to Investigate Aspect Ratio Dependent Etch and Etch Characteristics with Comparison to Saturated C-C4F8 T.L. Anglinmatumona, San Jose State University, C.T. Gabriel, Advanced Micro Devices, E. Allen, San Jose State University |
| PS-MoP20 Effects of N@sub 2@ Additive Gas on Etching Characteristics of Silicon Oxide Layers in F@sub 2@/N@sub 2@/Ar Remote Plasmas J.Y. Hwang, D.J. Kim, N.-E. Lee, Sungkyunkwan University, South Korea, C.Y. Jang, G.H. Bae, ATTO, Korea |
| PS-MoP21 Comparison of C@sub 4@F@sub 6@ with C@sub 4@F@sub 8@ Chemistry for Deformation of ArF Photoresist and Silicon Dioxide Etching using Dual Frequency Superimposed (DFS) Capacitive Coupled Plasmas C.H. Lee, C.H. Park, N.-E. Lee, Sungkyunkwan University, Korea |
| PS-MoP22 Influence of the Positive Ion Composition on the Ion-Assisted Chemical Etch Rate of SrTiO@sub 3@ Thin Films in Ar/SF@sub 6@ Plasmas O. Langlois, L. Stafford, J. Margot, Universite de Montreal, Canada, M. Gaidi, M. Chaker, INRS-Energie, Materiaux et Telecommunications, Canada |
| PS-MoP23 In Situ Etching of (Pb,Sr)TiO@sub 3@ Thin Films by using Inductively Coupled Plasma G.H. Kim, K.T. Kim, C.I. Kim, Chungang University, Korea |
| PS-MoP24 Surface Etching Mechanism of Bi@sub 4-x@La@sub x@Ti@sub 3@O@sub 12@ Thin Films using Quadrupole Mass Spectroscopy and X-ray Photoelectron Spectroscopy J.G. Kim, G.H. Kim, K.T. Kim, C.I. Kim, Chungang University, Korea |
| PS-MoP25 The Etching Characteristics of LaNiO@sub 3@ Thin Films in CF@sub 4@/Cl@sub 2@/Ar and BCl@sub 3@/Cl@sub 2@/Ar Gas Chemistry G.H. Kim, K.T. Kim, C.I. Kim, Chungang University, Korea, D.P. Kim, KDG Engineering Co., Ltd., Korea, C.I. Lee, Ansan College of Technology, Korea, T.H. Kim, Yeojoo Technical College, Korea |
| PS-MoP26 Low Damage Etching of III-V Semiconductors using a Low Angle Forward Reflected Neutral Beam B.J. Park, K.S. Min, H.C. Lee, J.W. Bae, G.Y. Yeom, Sungkyunkwan University, Korea |