AVS 52nd International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP25
The Etching Characteristics of LaNiO@sub 3@ Thin Films in CF@sub 4@/Cl@sub 2@/Ar and BCl@sub 3@/Cl@sub 2@/Ar Gas Chemistry

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Plasma Science and Technology Poster Session
Presenter: C.I. Kim, Chungang University, Korea
Authors: G.H. Kim, Chungang University, Korea
K.T. Kim, Chungang University, Korea
C.I. Kim, Chungang University, Korea
D.P. Kim, KDG Engineering Co., Ltd., Korea
C.I. Lee, Ansan College of Technology, Korea
T.H. Kim, Yeojoo Technical College, Korea
Correspondent: Click to Email
During the last decade, ferroelectric thin films have been attracting much attention for nonvolatile memory application. Among ferroelectric material, zirconate titanate (Pb(Zr,Ti)O@sub 3@ : PZT) thin films have been studied extensively because PZT has high dielectric constant and bistable polarization. Platinum (Pt) film usually employed as an electrode for metal-ferroelectric-metal (MFM) capacitor for 1 transistor-1 capacitor structure (1T/1C). However, Pt/PZT/Pt capacitors suffer from poor resistance on fatigue property due to generation oxygen vacancies in interface of Pt/PZT during exposing to a hydrogen environment. Therefore, metal-oxides (IrO@sub 2@ and RuO@sub 2@) have been studied for top electrode. However, IrO@sub 2@ and RuO@sub 2@ have the problems that metal-oxides are easily transferred to metallic Ir and Ru under vacuum and high temperature conditions, resulting in degradation of ferroelectric properties by H@sub 2@ diffusion. Recently, LaNiO@sub 3@ (LNO) electrodes are challenged as top and bottom electrodes. Because LNO has a pseudo cubic perovskite structure, the close lattice constant (3.84 Å) to PZT (4.04 Å ) and a good metallic property. In order to realize highly integrated FRAMs, the etching process must be developed. In this case, the task of primary importance is to understand etching mechanism to open the ways for the optimization of etching process. Unfortunately, there is only one report for etching LNO thin film. Therefore, the etching mechanism of LNO films should be understood in terms of etching system and gas mixture. In this work, we investigated etching characteristics and mechanisms of LNO thin films using CF@sub 4@/Cl@sub 2@/Ar and BCl@sub 3@/Cl@sub 2@/Ar mixtures in inductive coupled plasma (ICP) system. Plasma diagnostic was represented by quadrupole mass spectrometer and Langmuir probes measurements.