AVS 52nd International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP7
Study of the Plasma-Induced Damage by Inductively Coupled Plasma in Pb(Zr,Ti)O@sub 3@ for FeRAM(Ferroelectric Random Acess Memory) Devices

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Plasma Science and Technology Poster Session
Presenter: H.Y. Ko, Samsung Electronics, South Korea
Authors: H.Y. Ko, Samsung Electronics, South Korea
K.R. Byun, Samsung Electronics, South Korea
Y.J. Jung, Samsung Electronics, South Korea
D.H. Im, Samsung Electronics, South Korea
D.C. Yoo, Samsung Electronics, South Korea
S.H. Joo, Samsung Electronics, South Korea
J.H. Ham, Samsung Electronics, South Korea
S.H. Park, Samsung Electronics, South Korea
H.S. Kim, Samsung Electronics, South Korea
K.K. Chi, Samsung Electronics, South Korea
C.J. Kang, Samsung Electronics, South Korea
H.K. Cho, Samsung Electronics, South Korea
U.I. Jung, Samsung Electronics, South Korea
J.T. Moon, Samsung Electronics, South Korea
Correspondent: Click to Email
FeRAM is a non-volatile memory device based on the remnant polarization of ferroelectric film such as Pb(Zr,Ti)O@sub 3@ (PZT). The electrical properties of PZT films have proven to be excellent enough to apply to high-density FeRAM with 1T1C cell structure, in terms of the high remnant polarization and low crystallization temperature. However, it is known that high-density integration gives rise to several problems such as plasma-induced damage of PZT surface and surface composition change, which degrade FeRAM capacitor performances during the patterning of capacitor module. In this article, we carried out the investigations of the plasma-induced etching damage for the PZT thin films etched with the various gases chemistries (O2, Ar, BCl@sub 3@, Cl@sub 2@, CF@sub 4@, and mixture gases) on the microstructural and electrical properties. We analyzed the effect of individual and mixture gases on the near surface chemistry of the PZT thin films by XPS(X-ray Photoelectron Spectroscopy). We also used TEM(Transmission Electron Microscopy) and AFM(Atomic Force Microscope) for the structural and compositional change and roughness in the film through patterning of the real FeRAM devices. Finally, we evaluated the electrical properties (2Pr, fatigue, leakage current, retention) of the plasma-exposed PZT films through patterning of the real FeRAM devices.