AVS 52nd International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP23
In Situ Etching of (Pb,Sr)TiO@sub 3@ Thin Films by using Inductively Coupled Plasma

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Plasma Science and Technology Poster Session
Presenter: G.H. Kim, Chungang University, Korea
Authors: G.H. Kim, Chungang University, Korea
K.T. Kim, Chungang University, Korea
C.I. Kim, Chungang University, Korea
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To overcome the limitations of conventional capacitor structure, high-k material, for example, (Ba,Sr)TiO@sub 3@ (BST) and (Pb,Sr)TiO@sub 3@ (PST), have been intensively studied for a number of integrated devices such as dynamic random access memories (DRAM) because high dielectric constant, lower crystallization temperature and low leakage current. However, BST thin film possesses a satisfactorily characteristics, it was known that a post heat treatment at a high temperature was essential to obtain good electrical property. The heat treatment at high temperature can cause deleterious effects on an electrode, barrier metal, and contact plug. On the other hand, PST thin film can be a promising material due to its high dielectric constant, paraelectricity at normal operating temperature and good electrical properties. In this study, inductively coupled plasma etching system was used for PST thin film etching. The chlorine base plasmas were characterized by optical emission spectroscopy (OES), Langmuir probe and quadrupole mass spectrometer (QMS) analysis. OES and QMS were used for the analysis of byproduct.