| AVS 47th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-TuP1 Frequency Effects to E - H Discharge Mode Transitions in Inductively Coupled Plasmas M. Edamura, Hitachi, Ltd., Japan, E. Benck, National Institute of Standards and Technology |
| PS-TuP2 Effect of Wafer Temperature on High Aspect Ratio Hardmask Etching S. Lee, Y.C. Tien, Y.D. Chang, Winbond Electronics Corporation, Taiwan |
| PS-TuP3 Time Resolved Mass Spectrometric Plasma Diagnostics G.J. Peter, G. Nicolussi, N. Mueller, Balzers Instruments, Liechtenstein |
| PS-TuP4 The Boron Effects on YMnO@sub 3@ Thin Films Etching in High Density Ar/Cl@sub 2@/BCl@sub 3@ Plasma B.J. Min, Chungang University, Korea, Y.T. Kim, KIST, Korea, C.-I. Kim, Chungang University, Korea |
| PS-TuP5 The Study of Optical Emission Spectroscopy in SrBi@sub 2@Ta@sub 2@O@sub 9@ Etching Using Inductively Coupled Plasma S.U. Shin, D.P. Kim, E.-G. Chang, C.-I. Kim, Chungang University, Korea |
| PS-TuP6 CF, CF@sub 2@ and SiF Densities in Inductively Driven Discharges Containing C@sub 2@F@sub 6@, C@sub 4@F@sub 8@ and CHF@sub 3@ G.A. Hebner, Sandia National Laboratories |
| PS-TuP7 Ion Compositions and Energies in Inductively Coupled Discharges Containing SF@sub 6@ A.N. Goyette, Y. Wang, J.K. Olthoff, National Institute of Standards and Technology |
| PS-TuP8 Determination and Quantification of the Etch Products of Si with a Chlorine Plasma G.A. Gaddy, A. Orland, R. Blumenthal, Auburn University |
| PS-TuP9 Ion Angular Distribution at RF Biased Electrode in Inductively Coupled Plasma N. Mizutani, K. Yamamuro, T. Hayashi, ULVAC JAPAN, Ltd. |
| PS-TuP10 The Effects of Substrate Temperature on Self-Aligned Contact Etching Process C.W. Chu, J. Kim, K.-K. Chi, T.-H. Ahn, J.-T. Moon, Samsung Electronics, Korea |
| PS-TuP11 Molecular Dynamics Simulation of Oxide Etching by Energetic Halogens H. Ohta, S. Hamaguchi, Kyoto University, Japan |
| PS-TuP12 PIC/MCC Simulation of a 2D Axially Symmetric Dually Frequency RF Plasma Processing System S. Sunohara, S. Hamaguchi, Kyoto University, Japan |
| PS-TuP13 Effect of Time-varying Axial Magnetic Field on Photoresist Ashing in an Inductively Coupled Plasma S.-G. Park, H.-Y. Song, B.-H. O, Inha University, South Korea |
| PS-TuP14 The Characteristics of Atmospheric Pressure Glow Discharge formed by Capillary Electrode Y.H. Lee, C.H. Jeong, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS-TuP15 Spatial Distribution of Carbon Species in Laser Ablation of Graphite Target T. Ikegami, S. Ishibashi, Y. Yamagata, K. Ebihara, Kumamoto University, Japan, R.K. Thareja, Indian Institute of Technology Kanpur, India, J. Narayan, North Carolina State University |
| PS-TuP16 Controlled Plasma Characteristics by a Novel Method of Enhanced Inductively Coupled Plasma S.-H. Rha, C.-W. Kim, S.-G. Park, B.-H. O, Inha University, South Korea |
| PS-TuP17 Radio Frequency Biasing of an Ion-Ion Plasma B. Ramamurthi, University of Houston, V. Midha, General Electric, D.J. Economou, University of Houston |
| PS-TuP18 Comparative Study of W, WN@sub x@ and Si RIE in SF@sub 6@/Ar using Actinometry Technique S.A. Moshkalyov, C. Reyes-Betanzo, UNICAMP, Brazil, A.C. Ramos, UNICAMP-IFGW, Brazil, A. Diniz, J.W. Swart, UNICAMP, Brazil |
| PS-TuP19 Improved Etch Characteristics of SiO@sub2@ by the Enhanced Inductively Coupled Plasma S.-B. Cho, H.-Y. Song, S.-G. Park, B.-H. O, Inha University, South Korea |
| PS-TuP20 Silicon Surface Roughness Induced by Reactive Ion Etching in SF@sub 6@ and SF@sub 6@/O@sub 2@ Plasmas S.A. Moshkalyov, UNICAMP-University of Campinas, Brazil, P. Verdonck, R.D. Mansano, University of São Paulo - USP, Brazil, M. Cotta, UNICAMP, Brazil |
| PS-TuP21 Transmission Line Effects and Chlorine Plasma Characterization in an Inductively Coupled Plasma Etch Reactor M.H. Khater, L.J. Overzet, University of Texas at Dallas |
| PS-TuP22 Penetration of Electromagnetic Fields in ICP, Weakly Magnetized ICP, and Low-B Helicon Discharges J.D. Evans, F.F. Chen, D. Arnush, University of California, Los Angeles |
| PS-TuP23 Ion-Iion Plasma Formation in Chlorine in an Inductively Coupled Plasma Etch Reactor M.H. Khater, S.K. Kanakasabapathy, L.J. Overzet, University of Texas at Dallas |
| PS-TuP24 Effect of Temperature (or Heat) on the Etch Rate of Iridium and Platinum in CF@sub 4@/O@sub 2@ Plasma H. Ying, J.S. Maa, F. Zhang, S.T. Hsu, Sharp Laboratories of America, Inc. |
| PS-TuP25 Process Performance Evaluation of Low Damage Sources X. Tang, D. Manos, College of William and Mary |
| PS-TuP26 The Effects of Electrostatic Bias on the Radial Plasma Potential Profile in a Helicon Plasma S.W. Lee, S.H. Jun, S.H. Uhm, Y. Lee, H.Y. Chang, Korea Advanced Institute of Science and Technology |
| PS-TuP27 New Large Area Plasma Source Y. Lee, D.S. Lee, S.W. Lee, H.Y. Chang, Korea Advanced Institute of Science and Technology |
| PS-TuP28 Antenna Configurations for Large Area rf Inductive Plasma Sources M.M. Patterson, T. Lho, A.E. Wendt, N. Hershkowitz, University of Wisconsin, Madison |
| PS-TuP29 Dry Etching of SrBi2Ta2O9 Thin Films in Cl2/NF3/O2/Ar Inductively Coupled Plasmas Y.-H. Im, R.-J. Choi, Y.B. Hahn, Chonbuk National University, Korea, J.K. Lee, Korea Institute of Science and Technology |
| PS-TuP30 Ionized Magnetron Sputter Deposition of MgO for Protective Layers in PDP J. Joo, Kunsan National University, Korea |
| PS-TuP31 Plasma Characterization and Film Structure Control for ZrO2/Y2O3 Laser Ablation in Different Environments A.A. Voevodin, J.G. Jones, J.S. Zabinski, Air Force Research Laboratory, WPAFB |