AVS 47th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP8
Determination and Quantification of the Etch Products of Si with a Chlorine Plasma

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: G.A. Gaddy, Auburn University
Authors: G.A. Gaddy, Auburn University
A. Orland, Auburn University
R. Blumenthal, Auburn University
Correspondent: Click to Email
The chlorine plasma etching of silicon has been studied utilizing a novel technique. This technique, supersonic pulse plasma mass spectrometry, allows for the in-situ sampling of the etch plasma at varying heights above the silicon substrate. It has been demonstrated previously that theoretical predictions of the percent dissociation of molecular chlorine in high-density plasmas are only observed using this mass spectral technique. The investigation focuses on the identity and concentrations of the SiCl@sub x@ (x = 1 to 4) products under typical ECR-microwave plasma conditions. Previous studies have shown SiCl to be the primary etch product. The determination of the actual percent yields of all Si etch products may be useful in determining the chemical mechanism for the release of volatile products during the etching of Si.