AVS 47th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP27
New Large Area Plasma Source

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: Y. Lee, Korea Advanced Institute of Science and Technology
Authors: Y. Lee, Korea Advanced Institute of Science and Technology
D.S. Lee, Korea Advanced Institute of Science and Technology
S.W. Lee, Korea Advanced Institute of Science and Technology
H.Y. Chang, Korea Advanced Institute of Science and Technology
Correspondent: Click to Email
A new large area plasma source for 300mm wafer processing were developed and studied. The antenna system of the source consists of 3-turn circular coils connected parallely and the outer coil connected with series to an additional capacitor which is able to controll the antenna current distribution. It was found that the source have several advantages compared to other popular plasma sources. Firstly, the current distribution of the antenna by changing capacitance of the capacitor can be controlled so that the good spatial uniforminty of electron density is obtained. Secondly, the source has very low antenna voltage because the antenna has very low impedance near LC resonance point. At 3 - 30 MHz and 2 - 20 mTorr of argon, electron density uniformity within 3% was achieved.