AVS 47th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP29
Dry Etching of SrBi2Ta2O9 Thin Films in Cl2/NF3/O2/Ar Inductively Coupled Plasmas

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: Y.-H. Im, Chonbuk National University, Korea
Authors: Y.-H. Im, Chonbuk National University, Korea
R.-J. Choi, Chonbuk National University, Korea
Y.B. Hahn, Chonbuk National University, Korea
J.K. Lee, Korea Institute of Science and Technology
Correspondent: Click to Email
Inductively coupled plasma etching of SrBi2Ta2O9 (SBT) films for FRAM applications has been carried out in Cl2/NF3/O2/Ar discharges. The etch characteristics and ferroelectric properties of SBT films prepared by magnetron sputtering were investigated in terms of etch rate and P-E hysteresis curve. The etch rates were dependent on plasma parameters such as ICP source power, rf chcuk power and etch gas combinations. Ar plasma showed fastest etch rate, but resulted in severe damage to ferroelectric layers. Addition of oxygen to the etch gas combination reduced etch damage. The electrical properties of the SBT films were quite dependent on etch conditions. The decreased remanent polarization of etched Pt/SBT/Pt structure was rectified after annealing in oxygen atmosphere.