| AVS 47th International Symposium | |
| Manufacturing Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-ThA1 Invited Paper Challenges in Modeling & Simulation of Semiconductor Equipment & Processes A.K. Das, Applied Materials Inc. |
| 2:40pm | MS-ThA3 Modeling of Oxide CMP and Polish Pad Conditioning L. Jiang, H. Simka, S.S. Shankar, J. Su, K. Kumar, V. Murali, Intel Corp. |
| 3:00pm | MS-ThA4 Mechanical Properties of a CuTa Interface by Molecular Dynamics P. Heino, E. Ristolainen, Tampere University of Technology, Finland |
| 3:20pm | MS-ThA5 Integrating Process Models, Equipment Logistics, and Factory Flow for Manufacturing Systems Optimization L. Henn-Lecordier, M.-Q. Nguyen, B. Conaghan, P. Mellacheruvu, J.W. Herrmann, G.W. Rubloff, University of Maryland |
| 3:40pm | MS-ThA6 Plasma Reactor Simulation to Improve Film Deposition Uniformity K. Bera, K. Liu, Applied Materials, Inc. |
| 4:00pm | MS-ThA7 First Principles Modeling of Gas-Surface Interactions in Low Pressure CVD Processes H. Simka, S.S. Shankar, Intel Corp., J.-R. Hill, S. Mumby, Molecular Simulations, Inc. |
| 4:20pm | MS-ThA8 Etching of Silicon in HBr Plasmas for High Aspect Ratio Features H.H. Hwang, ELORET Corp., G.S. Mathad, R. Ranade, Infineon Technologies, Inc., M. Meyyappan, NASA Ames Research Center |
| 4:40pm | MS-ThA9 Contamination Removal from Wafer with Deep Trenches H. Lin, A.A. Busnaina, I.I. Suni, NSF and CAMP (New York Center for Advanced Materials Processing, at Clarkson University) |
| 5:00pm | MS-ThA10 In Situ Metrology for Cu Electroplating G. Barna, Texas Instruments |