AVS 47th International Symposium
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThA

Paper MS-ThA3
Modeling of Oxide CMP and Polish Pad Conditioning

Thursday, October 5, 2000, 2:40 pm, Room 304

Session: Advanced Modeling for IC Manufacturing
Presenter: L. Jiang, Intel Corp.
Authors: L. Jiang, Intel Corp.
H. Simka, Intel Corp.
S.S. Shankar, Intel Corp.
J. Su, Intel Corp.
K. Kumar, Intel Corp.
V. Murali, Intel Corp.
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A model for the mechanical and chemical aspects of oxide CMP is presented. We combined both contact mechanics and slurry flow in a physical model (Jiang & Shankar 1999) and compared the simulation results to recent studies on oxide CMP. Pad asperity deformation and slurry flow between asperities are modeled simultaneously. Dissolution and polish rates of oxide are modeled based on silica hydrolysis kinetics and calibrated with experimental data. Mechanisms of pad glazing and conditioning effect on polish rate are also discussed with a review of literature data. Pad glazing is a result of mechanical (cyclic polish stress) and chemical actions (oxidation of surface during polish). Pad degradation effects on polish rate over the wafer scale are predicted by combining pad fatigue model with mechanics/flow simulations. Relative motions between pad, wafer, and individual conditioner heads are simulated to predict pad conditioning effectiveness and pad age.