AVS 47th International Symposium
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThA

Paper MS-ThA6
Plasma Reactor Simulation to Improve Film Deposition Uniformity

Thursday, October 5, 2000, 3:40 pm, Room 304

Session: Advanced Modeling for IC Manufacturing
Presenter: K. Bera, Applied Materials, Inc.
Authors: K. Bera, Applied Materials, Inc.
K. Liu, Applied Materials, Inc.
Correspondent: Click to Email
A capacitively coupled plasma discharge has been simulated for an industrial reactor to investigate the uniformity of the film deposition profile on the wafer. The gap width between the powered cathode and the ceramic wafer pedestal is very small compared to the radius of the cathode. Non-uniform grid is used to resolve the sheath in the plasma for this reactor configuration. Silane is fed as a feed gas from the showerhead into the chamber at low pressure. The spatial distributions of electron, ion and radical densities, electron temperature and ion energy are obtained using Plasma Reactor Simulator (PRSim) code. The spatial distributions of radical flux and ion energy on the wafer are useful for the prediction of thin-film deposition rate. The effect of the distance of wall dielectric from the wafer edge on the surface process is also investigated. A mixture of silane and nitrous oxide is fed in the chamber to investigate the effect of silane dilution on the process. The present study is used to identify the reactor design condition to achieve uniform film deposition rate on the wafer.