| AVS 45th International Symposium | |
| Thin Films Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | TF-WeM1 Invited Paper ULSI Metallization and Interconnects C.B. Whitman, CVC, Inc. |
| 9:00am | TF-WeM3 Pinhole Formation in Solid Phase Epitaxial Film of CoSi@sub 2@ on Si(111) L. Ruan, D.M. Chen, The Rowland Institute for Science |
| 9:20am | TF-WeM4 Investigation of the Structural and Chemical Stability of Advanced Metal Gate and Ultra-Thin Gate Dielectric Interfaces B. Claflin, G. Lucovsky, North Carolina State University |
| 9:40am | TF-WeM5 Low Temperature Deposition of Zirconium Diboride, A Candidate Diffusion Barrier, Using Remote Plasma CVD J.H. Sung, D.M. Goedde, G.S. Girolami, J.R. Abelson, University of Illinois, Urbana-Champaign |
| 10:00am | TF-WeM6 A Parameter Free Model for the Simulation of Trench Filling Profiles under Al PVD and Al IPVD Conditions A. Kersch, Siemens Ag, Germany, U.P. Hansen, Technical University Munich, Germany |
| 10:20am | TF-WeM7 Energy Dependent Atomistic Simulations of Trench-filling Y.G. Yang, X.W. Zhou, H.N.G. Wadley, University of Virginia |
| 10:40am | TF-WeM8 Sputtered Copper Seedlayer Processing Issues E.C. Cooney III, D.C. Strippe, J.W. Korejwa, A.H. Simon, C. Uzoh, IBM Microelectronics |
| 11:00am | TF-WeM9 The Effect of Sputter Process and Target Pass-Through Flux on Sputter Deposition of Co Thin Film for Cobalt Silicide Metallization H. Zhang, J. Poole, R. Eller, M. Keefe, Tosoh SMD, Inc. |
| 11:20am | TF-WeM10 Improvement of Morphological Stability of Ag Thin on TiN Layer C.-Y. Hong, Massachusetts Institute of Technology, Y.-C. Peng, L.-J. Chen, National Tsing-Hua University, Republic of China, W.-Y. Hsieh, United Microelectronic Corporation, Republic of China |