AVS 45th International Symposium
    Thin Films Division Wednesday Sessions
       Session TF-WeM

Paper TF-WeM7
Energy Dependent Atomistic Simulations of Trench-filling

Wednesday, November 4, 1998, 10:20 am, Room 310

Session: ULSI Metalization and Interconnects
Presenter: Y.G. Yang, University of Virginia
Authors: Y.G. Yang, University of Virginia
X.W. Zhou, University of Virginia
H.N.G. Wadley, University of Virginia
Correspondent: Click to Email
A comprehensive atomistic analysis of incident kinetic energy effects during vapor deposition has been conducted and the results integrated into a kinetic Monte Carlo simulation of physical vapor deposition. Interactions of hyperthermal atoms with substrate that resulted in biased diffusion, atomic reflection, resputtering and local thermal spikes were incorporated in a simulation model that also included normal, thermally driven multipath diffusional processes. Results are presented for the vapor phase deposition of metal interconnects by the dual damascene process. This involves the filling of increasingly narrow trenches with copper and other metals. Filling of these trenches has been studied as a function of the substrate temperature, the deposition rate, trench geometric parameters, incident atom flux energy and angular distributions.