AVS 45th International Symposium
    Thin Films Division Wednesday Sessions
       Session TF-WeM

Paper TF-WeM6
A Parameter Free Model for the Simulation of Trench Filling Profiles under Al PVD and Al IPVD Conditions

Wednesday, November 4, 1998, 10:00 am, Room 310

Session: ULSI Metalization and Interconnects
Presenter: A. Kersch, Siemens Ag, Germany
Authors: A. Kersch, Siemens Ag, Germany
U.P. Hansen, Technical University Munich, Germany
Correspondent: Click to Email
Simulation results are presented for microscopic profile evolution of deposited Al metal films in trench structures. The model for the simulation is derived from atomistic, molecular dynamics calculations using a previously developed Al-Al interaction model.@footnote 1@ The essential elements are: (1) an angular and energy dependent non unity sticking coefficient resulting in specular reflection of the impinging Al atoms, (2) an energy and angular dependent sputter yield. The parameters of the model are obtained from the molecular dynamics results, surface diffusion is so far neglected. We study the surface evolution and sidewall coverage for different PVD and IPVD conditions for trench structures of different aspect ratios and clarify the influence of the model elements on the deposition process. The predictions of the model agree with the results of a published model@footnote 2@ in some range of process conditions. Finally results are compared to experimental data. @FootnoteText@ @footnote 1@U. Hansen, Molecular Dynamics Study of Al PVD Processes @footnote 2@S. Hamaguchi and S.M. Rossnagel, J. Vac. Sci. Technol. B13 (1995) 183