AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions

Session EM+PS-ThM
Processing of High K Dielectrics for DRAMs

Thursday, November 5, 1998, 8:20 am, Room 314/315
Moderator: K.R. Milkove, IBM T.J. Watson Research Center


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am EM+PS-ThM1
Growth and Characterization of Ba@sub 0.6@Sr@sub 0.4@TiO@sub 3@ Thin Films on Si with Pt Electrodes
L. Kinder, I.L. Grigorov, C. Kwon, Q.X. Jia, Los Alamos National Laboratory, L. Luo, J. Zhao, Applied Materials, Inc.
8:40am EM+PS-ThM2
Synthesized Single Crystalline Ba@sub (1-x)@Sr@sub x@TiO @sub 3@ Thin Films for DRAM Application
F.F. Feng, C.L. Chen, Z.H. Zhang, Y. Liou, P. Jin, W.K. Chu, C.W. Chu, University of Houston
9:00am EM+PS-ThM3
Scanning Capacitance Imaging for Evaluation of High-k Dielectric Oxide Materials
Y. Yamaguchi, K.P. Wiederhold, B.D. White, N.E. Wittry, H.C. Galloway, Southwest Texas State University
9:20am EM+PS-ThM4
Characterization of Thermal Annealing of Tantalum Pentoxide for High-k Dielectric Applications
R.L. Opila, J.P. Chang, G.B. Alers, Bell Laboratories, Lucent Technologies
9:40am EM+PS-ThM5
Structural Properties of Ultrathin Films of High Dielectric Constant Materials on Silicon
E. Gusev, IBM T.J. Watson Research Center, H.C. Lu, T. Gustafsson, E. Garfunkel, Rutgers University, G.B. Alers, Bell Laboratories, Lucent Technologies
10:00am EM+PS-ThM6 Invited Paper
Etching of High Dielectric Constant Materials for DRAMs and Ferroelectric Materials for FeRAMs
L.G. Jerde, A. Cofer, K. Olson, P. Rajora, S.P. DeOrnellas, Tegal Corporation
10:40am EM+PS-ThM8
Patterning of Reactively Sputtered Tantalum Pentoxide, a High Epsilon Material, by Plasma Etching
L.B. Jonsson, F. Engelmark, J. Du, C. Hedlund, Uppsala University, Sweden, U. Smith, Ericsson Components AB, Sweden, H.-O. Blom, Uppsala University, Sweden
11:00am EM+PS-ThM9
The High Temperature Platinum Etching Using Titanium Layer
H.-W. Kim, B. Ju, B. Nam, W. Yoo, C.J. Kang, T.-H. Ahn, J. Moon, M.Y. Lee, Samsung Electronics, Co., Korea
11:20am EM+PS-ThM10
Removal of Sidewall Re-depositions Formed by Reactive Ion Etching of Platinum for Embedded DRAM Applications
H.M. Ranpura, D.H. Butler, S.P. Beaudoin, Arizona State University, C.J. Tracy, L. Chang, Motorola Semiconductor Products Sector
11:40am EM+PS-ThM11
Study on Surface Reaction of (Ba,Sr)TiO@sub 3@ Thin Films by High Density Plasma Etching
S.B. Kim, C.I. Kim, E.G. Chang, Chung-ang University, Korea