AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM+PS-ThM

Paper EM+PS-ThM2
Synthesized Single Crystalline Ba@sub (1-x)@Sr@sub x@TiO @sub 3@ Thin Films for DRAM Application

Thursday, November 5, 1998, 8:40 am, Room 314/315

Session: Processing of High K Dielectrics for DRAMs
Presenter: F.F. Feng, University of Houston
Authors: F.F. Feng, University of Houston
C.L. Chen, University of Houston
Z.H. Zhang, University of Houston
Y. Liou, University of Houston
P. Jin, University of Houston
W.K. Chu, University of Houston
C.W. Chu, University of Houston
Correspondent: Click to Email
Perovskite Ba@sub (1-x)@Sr@sub x@TiO@sub 3@ thin films have been synthesized on (001) LaAlO@sub 3@ and (001) SrTiO@sub 3@ substrates with SrRuO@sub 3@ or Pt bottom electrodes by pulsed laser ablation. Extensive X-ray diffraction, rocking curve, and pole-figure studies suggest that the as-grown films are (00l) oriented with single crystalline quality. RBS studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield of only 2.6 % or less, suggesting that the crystallinity of the as-grown films can be compared with the single crystal silicon. Atomic force microscopy studies indicate that the as-epitaxial films are atomic smooth under the selected growth conditions. The dielectric property measurements show room temperature values of the relative dielectric constant and loss tangent of larger than 750 and 0.005, respectively.