AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM+PS-ThM

Invited Paper EM+PS-ThM6
Etching of High Dielectric Constant Materials for DRAMs and Ferroelectric Materials for FeRAMs

Thursday, November 5, 1998, 10:00 am, Room 314/315

Session: Processing of High K Dielectrics for DRAMs
Presenter: L.G. Jerde, Tegal Corporation
Authors: L.G. Jerde, Tegal Corporation
A. Cofer, Tegal Corporation
K. Olson, Tegal Corporation
P. Rajora, Tegal Corporation
S.P. DeOrnellas, Tegal Corporation
Correspondent: Click to Email
The introduction of ferroelectric and high dielectric constant films and their associated metals, barrier materials and adhesion layers for DRAM, embedded DRAM and FeRAM applications are driving some of the most challenging etch requirements in the IC fabrication industry. The specifications resulting from these requirements range from very aggressive profile and critical dimension control, to etch selectivities, contamination and damage, defects and chamber cleaning frequency. Some of the most difficult of these requirements are a result of the design rules that will be used in production for the DRAM applications (i.e., 0.15 m and below). The inherent involatility of the etch products of these materials is another key factor contributing to the difficulty in meeting the requirements. In this paper we will present and discuss the etch requirements for these materials, the reactor technology we use to etch them, selected process and manufacturability results for these materials and future directions for this work.