AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM+PS-ThM

Paper EM+PS-ThM11
Study on Surface Reaction of (Ba,Sr)TiO@sub 3@ Thin Films by High Density Plasma Etching

Thursday, November 5, 1998, 11:40 am, Room 314/315

Session: Processing of High K Dielectrics for DRAMs
Presenter: S.B. Kim, Chung-ang University, Korea
Authors: S.B. Kim, Chung-ang University, Korea
C.I. Kim, Chung-ang University, Korea
E.G. Chang, Chung-ang University, Korea
Correspondent: Click to Email
Ferroelectric devices are attractive for dynamic random access memories (DRAMs) applications because of high dielectric constant. Using ferroelectric device structure, manufacturing cell capacitance of highly integrated memory device is possible. Small feature size requires anisotropic etching. Since research of (Ba,Sr)TiO@sub 3@ thin films etching is not widely, we studied on surface reaction of (Ba,Sr)TiO@sub 3@ thin films by high density plasma etching. (Ba,Sr)TiO@sub 3@ thin films were etched with an Inductively coupled plasma (ICP) by varying the etching parameter such as BCl@sub 3@/C@sub 2@F@sub 6@/Ar gas mixing ratio, RF power, and pressure. Etching effect were investigated in terms of etch rate, selectivity. In this study, (Ba,Sr)TiO@sub 3@ etching mechanism was investigated with XPS (X-ray photoelectron spectroscopy) and OES (Optical emission spectrometry) and QMS (Quadrupole mass spectrometry). Ion current density was measured by using single Langmuir probe. Surface of etched (Ba,Sr)TiO@sub 3@ investigated with SEM (Scanning electron microscopy).