AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM+PS-ThM

Paper EM+PS-ThM10
Removal of Sidewall Re-depositions Formed by Reactive Ion Etching of Platinum for Embedded DRAM Applications

Thursday, November 5, 1998, 11:20 am, Room 314/315

Session: Processing of High K Dielectrics for DRAMs
Presenter: S.P. Beaudoin, Arizona State University
Authors: H.M. Ranpura, Arizona State University
D.H. Butler, Arizona State University
S.P. Beaudoin, Arizona State University
C.J. Tracy, Motorola Semiconductor Products Sector
L. Chang, Motorola Semiconductor Products Sector
Correspondent: Click to Email
Removal of platinum sidewall re-depositions (SRDs) formed due to patterning of electrodes due to reactive ion etching (RIE) for an embedded dynamic random access memory (DRAM) project has been investigated. A serious problem in integrating these devices is the re-deposition of non-volatile etch products onto the pattern sidewall. Removal of these SRDs without damaging other exposed materials is a challenging process. A mixture of argon (Ar) and chlorine (Cl@sub 2@) plasma was used to etch the platinum electrodes. Following the etching step the wafers were processed in an oxygen plasma to remove the photoresist on the wafer. Results are presented for post-ashed wafers that were heated at different temperatures for varying times in different ambients. Following heating wafers were cleaned in aqueous hydrochloric acid (HCl). Results are also presented for ultrasonic cleaning of wafers in HCl.