AVS 66th International Symposium & Exhibition | |
Electronic Materials and Photonics Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | EM+AP+MS+NS+TF-ThM1 High-density Plasma for Soft Etching of Noble Metals Gerhard Franz, V. Sushkov, Munich University of Applied Sciences, Germany, W. Oberhausen, R. Meyer, Technische Universität München, Germany |
8:20am | EM+AP+MS+NS+TF-ThM2 Crystalline InP Growth and Device Fabrication Directly on Amorphous Dielectrics at Temperatures below 400oC for Future 3D Integrated Circuits Debarghya Sarkar, Y. Xu, S. Weng, R. Kapadia, University of Southern California |
8:40am | EM+AP+MS+NS+TF-ThM3 Invited Paper The Role and Requirements of Selective Deposition in Advanced Patterning Charles Wallace, Intel Corporation |
9:20am | EM+AP+MS+NS+TF-ThM5 Graphene-Template Assisted Selective Epitaxy (G-TASE) of Group IV Semiconductors M. Arslan Shehzad, A. T. Mohabir, M.A. Filler, Georgia Institute of Technology |
9:40am | EM+AP+MS+NS+TF-ThM6 Resistivity and Surface Scattering Specularity at (0001) Ru/dielectric Interfaces S.S. Ezzat, University of Central Florida, P.D. Mani, View Dynamic Glass, Inc., A. Khaniya, W.E. Kaden, University of Central Florida, D. Gall, Rensselaer Polytechnic Institute, K. Barmak, Columbia University, Kevin Coffey, University of Central Florida |
11:00am | EM+AP+MS+NS+TF-ThM10 Invited Paper Electrochemical Atomic Layer Deposition and Etching of Metals for Atomically-Precise Fabrication of Semiconductor Interconnects Y. Gong, K. Venkatraman, Rohan Akolkar, Case Western Reserve University |
12:00pm | EM+AP+MS+NS+TF-ThM13 Wafer-Scale Fabrication of Carbon-Based Electronic Devices Zhigang Xiao, J. Kimbrough, J. Cooper, K. Hartage, Q. Yuan, Alabama A&M University |