| AVS 66th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+AP+MS+NS+TF-ThM |
| Session: | Advanced Processes for Interconnects and Devices |
| Presenter: | Zhigang Xiao, Alabama A&M University |
| Authors: | Z. Xiao, Alabama A&M University J. Kimbrough, Alabama A&M University J. Cooper, Alabama A&M University K. Hartage, Alabama A&M University Q. Yuan, Alabama A&M University |
| Correspondent: | Click to Email |
In this research, we report the wafer-scale fabrication of carbon nanotube or graphene-based electronic device such as field-effect transistors (FETs). Carbon nanotube-based devices were fabricated with the alternating electric field-directed dielectrophoresis (DEP) method, and the graphene-based devices were fabricated with the carbon films grown with plasma-enhanced atomic layer deposition (PEALD) or e-beam evaporation. Semiconducting carbon nanotubes were dispersed ultrasonically in solutions, and were deposited and aligned onto a pair of gold electrodes in the fabrication of carbon nanotube-based electronic devices using the dielectrophoresis method. The DEP-aligned tubes were further fabricated into carbon nanotube field-transistors (CNTFETs) and CNTFET-based electronic devices such as CNT-based inverters and ring oscillators using the microfabrication techniques. The fabricated devices were imaged using the scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM), and the electrical properties were measured from the fabricated devices using the semiconductor analyzer. The semiconducting CNTs achieved higher yield in the device fabrication, and the fabricated devices demonstrated excellent electrical properties.