AVS 66th International Symposium & Exhibition
    Electronic Materials and Photonics Division Thursday Sessions
       Session EM+AP+MS+NS+TF-ThM

Paper EM+AP+MS+NS+TF-ThM6
Resistivity and Surface Scattering Specularity at (0001) Ru/dielectric Interfaces

Thursday, October 24, 2019, 9:40 am, Room A214

Session: Advanced Processes for Interconnects and Devices
Presenter: Kevin Coffey, University of Central Florida
Authors: S.S. Ezzat, University of Central Florida
P.D. Mani, View Dynamic Glass, Inc.
A. Khaniya, University of Central Florida
W.E. Kaden, University of Central Florida
D. Gall, Rensselaer Polytechnic Institute
K. Barmak, Columbia University
K.R. Coffey, University of Central Florida
Correspondent: Click to Email
In this work we report the variation of resistivity with film thickness and with changes in surface characteristics for ex-situ annealed single crystal (0001) Ru thin films grown on c-axis sapphire single crystal substrates. The room temperature deposition of SiO2 on the Ru surface increased the resistivity of the annealed films and is interpreted as an increase in diffuse scattering of the upper surface from a primarily specular previous condition in the context of the Fuchs-Sondheimer model of surface scattering. The characterization of the films and upper Ru surface by low energy electron diffraction (prior to SiO2 deposition), x-ray reflectivity, x-ray diffraction, and sheet resistance measurements is reported. The film resistivity and specularity of the Ru/SiO2 interface is observed to reversibly transition between high resistivity (low specularity) and low resistivity (high specularity) states.