| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EM-ThP1 Proton Irradiation of Lattice Matched InAlN/GaN High Electron Mobility Transistors C.-F. Lo, L. Liu, T.S. Kang, F. Ren, University of Florida, C. Schwartz, E. Flitsiyan, L. Chernyak, University of Central Florida, H.-Y. Kim, J. Kim, Korea University, Republic of Korea, O. Laboutin, Y. Cao, J.W. Johnson, Kopin Corporation, P. Frenzer, S.J. Pearton, University of Florida |
| EM-ThP2 Effects of 2MeV Ge+ Irradiation on AlGaN/GaN HEMTs E.A. Douglas, P. Frenzer, S.J. Pearton, C.-F. Lo, L. Liu, T.S. Kang, F. Ren, University of Florida, E. Bielejec, Sandia National Laboratories |
| EM-ThP3 Influence of AlInN Buffer Layer Thickness on the Properties of GaN Films on Si(111) Substrate using RF Metal-Organic Molecular Beam Epitaxy W.C. Chen, C.T. Lee, C.-N. Hsiao, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan |
| EM-ThP4 Morpholigical Study of GaN Films Grown Under ALD Process Conditions as Well as Both Over- and Under- Saturated Growth Conditions J.C. Revelli, T.J. Anderson, University of Florida |
| EM-ThP5 Structural, Compositional, and Thermal Stability Studies on In1-xGaxN Epilayers A. Acharya, Georgia State University, M. Buegler, Technical University of Berlin, Germany, S.D. Gamage, N. Dietz, B. Thoms, Georgia State University |
| EM-ThP6 The Influence of the Group V/III Molar Precursor Ratio on the Structural and Optoelectrical Properties of InN Epilayers Grown by High-Pressure CVD R. Atalay, Georgia State University, M. Buegler, Technische Universität Berlin, Germany, S.D. Gamage, M.K.I. Senevirathna, Georgia State University, G. Durkaya, University of California Irvine, L. Su, UNC Charlotte, A.G.U. Perera, Georgia State University, I. Ferguson, UNC Charlotte, N. Dietz, Georgia State University |
| EM-ThP7 Protoype of Junctionless Transistor on SOI Wafers using Focused Ion Beam Milling L. Petersen Barbosa Lima, J. Alexandre Diniz, I. Doi, J. Godoy Filho, State University of Campinas, Brazil, H. Ivanov Boudinov, University of Rio Grande Do Sul, Brazil |
| EM-ThP8 Simulation of Millisecond Laser Anneal on SOI: A Study of Dopant Activation and Mobility and its Application to Scaled FinFET Thermal Processing T. Michalak, J. Herman, M. Rodgers, D. França, C. Borst, University at Albany-SUNY |
| EM-ThP9 Equivalent-Circuit Model for Vacuum Ultraviolet Irradiation of Dielectric Films H. Sinha, J.L. Shohet, University of Wisconsin-Madison |
| EM-ThP10 Surface Photoconductivity of SiO2 and SiCOH Induced by Vacuum Ultraviolet Radiation H. Zheng, M.T. Nichols, D. Pei, University of Wisconsin-Madison, G.A. Antonelli, Novellus Systems, Inc., Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| EM-ThP11 Spatial Volume Charge Distribution Measurement in Thin Dielectric Films: Electro-Acoustic Method D. Pei, M.T. Nichols, University of Wisconsin-Madison, Y. Shkel, Commet LLC, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| EM-ThP12 Investigation of Photoluminescent Characteristics and Structural Properties of Thin Film Zinc Silicate Doped with Manganese K.H. Yoon, J.H. Kim, Chungbuk National University (CBNU), Republic of Korea |
| EM-ThP13 The Electrical and Thermal Properties of Nanoscale Multilayered Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te3-xSexThin Films M. Hines, Z. Xiao, Alabama A&M University |
| EM-ThP14 Mapping the Magnetic Detection Properties of Chip-Scale Optically Pumped Magnetometers N. Ptschelinzew, P.H. Holloway, M.R. Davidson, University of Florida |
| EM-ThP15 Characterization of ZnO/CuO Nanolaminate Materials S.T. King, L. Bilke, B. Oleson, J. Krueger, E. Tennyson, University of Wisconsin - La Crosse |
| EM-ThP16 Small-Molecule Scaffolds for Directed Self-Assembly P.L. Mancheno-Posso, A.J. Muscat, University of Arizona |