AVS 59th Annual International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP12
Investigation of Photoluminescent Characteristics and Structural Properties of Thin Film Zinc Silicate Doped with Manganese

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Electronic Materials and Processing Poster Session
Presenter: J.H. Kim, Chungbuk National University (CBNU), Republic of Korea
Authors: K.H. Yoon, Chungbuk National University (CBNU), Republic of Korea
J.H. Kim, Chungbuk National University (CBNU), Republic of Korea
Correspondent: Click to Email
The photoluminescent characteristics and structural properties of manganese-doped zinc silicate (Zn2SiO4:Mn) thin films were investigated. The Zn2SiO4:Mn films were deposited by radio frequency magnetron sputtering, followed by post-deposition annealing at temperatures of 600 - 1200 °C. The Zn2SiO4:Mn films exhibited a pronounced optical absorption edge in the near ultraviolet wavelength region and the maximum transmittance reached approximately 0.922. The refractive index of the Zn2SiO4:Mn films showed normal dispersion behavior. X-ray diffraction and atomic force microscopy measurements revealed that the as-deposited Zn2SiO4:Mn films had an amorphous structure with a smooth surface morphology. The Zn2SiO4:Mn films became crystalline after annealing at 800 °C and the crystallinity of the films was continuously improved up to 1200 °C. The annealed Zn2SiO4:Mn films had a polycrystalline rhombohedral structure with no preferred crystallographic orientation of the crystallites. The photoluminescence spectra of the annealed Zn2SiO4:Mn films showed broad-band emissions with a peak maximum at about 523 nm. The PL emission intensity was enhanced as the annealing temperature increased, resulting from the improvement of the crystallinity of the Zn2SiO4:Mn films. The excitation band exhibited a peak maximum at around 243 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent manganese ion in the Zn2SiO4 system.