| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | A. Acharya, Georgia State University |
| Authors: | A. Acharya, Georgia State University M. Buegler, Technical University of Berlin, Germany S.D. Gamage, Georgia State University N. Dietz, Georgia State University B. Thoms, Georgia State University |
| Correspondent: | Click to Email |
The structural and compositional properties of indium gallium nitride (InGaN) epilayers grown by high-pressure chemical vapor deposition have been studied using x-ray diffraction (XRD), Auger electron spectroscopy (AES) and high-resolution electron energy loss spectroscopy (HREELS). In addition, the thermal stability of the epilayers have been studied using temperature programmed desorption (TPD). The XRD pattern shows the InGaN (0002) Bragg reflex at 31.38 deg, indicating single-phase InGaN epilayers. Both XRD and AES measurements indicate a composition x of 4% gallium. The HREEL s pectra of atomic hydrogen-exposed surfaces exhibit modes assigned to a surface N–H species, which were confirmed by observation of isotopic shifts following exposure to atomic deuterium. No In–H or Ga-H vibrations were observed suggesting the epilayer is N-polar. The thermal desorption study indicated that nitrogen desorption from the sample starts at 625 °C and peaks at 740 °C. No significant desorption of NH*/NH2* fragments have been observed. From an Arrhenius plot, an activation energy for the desorption of nitrogen of 1.14 ± 0.06 eV was found.