| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | P. Frenzer, University of Florida |
| Authors: | C.-F. Lo, University of Florida L. Liu, University of Florida T.S. Kang, University of Florida F. Ren, University of Florida C. Schwartz, University of Central Florida E. Flitsiyan, University of Central Florida L. Chernyak, University of Central Florida H.-Y. Kim, Korea University, Republic of Korea J. Kim, Korea University, Republic of Korea O. Laboutin, Kopin Corporation Y. Cao, Kopin Corporation J.W. Johnson, Kopin Corporation P. Frenzer, University of Florida S.J. Pearton, University of Florida |
| Correspondent: | Click to Email |
The DC characteristics of InAlN/GaN High Electron Mobility Transistors (HEMTs) were measured before and after irradiation with 5, 10 or 15 MeV protons at doses up to 2×1015 cm-2. At 5 MeV, the on/off ratio degraded by two orders of magnitude for the highest dose, while the sub-threshold slope increased from 77 to 122 mV/decade. There was little change in transconductance or gate or drain currents for doses up to 2×1013 cm-2, but for the highest dose the drain current and transconductance decreased by ~40% while the reverse gate current increased by a factor of ~6. The minority carrier diffusion length was around 1µm independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart.