AVS 59th Annual International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP3
Influence of AlInN Buffer Layer Thickness on the Properties of GaN Films on Si(111) Substrate using RF Metal-Organic Molecular Beam Epitaxy

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Electronic Materials and Processing Poster Session
Presenter: W.C. Chen, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan
Authors: W.C. Chen, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan
C.T. Lee, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan
C.-N. Hsiao, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan
Correspondent: Click to Email
Hexagonal structure GaN films were grown on silicon (111) substrate by radio-frequency metal-organic molecular beam epitaxy with AlxIn1-xN buffer layers. We discussed the influence of AlInN buffer layer thickness on properties of GaN films. The thickness of the AlInN buffer layer can effectively counteract the tensile stress usually observed in the GaN layer deposited on Si(111). For a 10-nm-thick AlInN, crack density of 2.4 × 105/mm and a crystalline quality of 150 arcmin are obtained. Also, the average later thicknesses measured about 300 nm, and the growth rate about 0.2 μm/hr. Also, Strong band-edge emission from GaN on Si(111) is observed at 3.39 eV with 70 nm-thick AlInN interlayer. The reduced lattice mismatch between the GaN film and Si(111) is responsible for improvement of GaN quality using the buffer-layer technique.