| AVS 57th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS1-TuA1 Reaction Mechanism and Profile Evolution for Cleaning and Sealing Porous Low-k Dielectrics using He/H2 and Ar/NH3 Plasmas J. Shoeb, Iowa State University, M.J. Kushner, University of Michigan, Ann Arbor |
| 2:20pm | PS1-TuA2 Mechanism of Modification in Si-O-Si Structure in Porous SiOCH Low-k Films by H2/N2 Plasmas H. Yamamoto, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, M. Hori, Nagoya University, Japan, T. Imamura, H. Hayashi, I. Sakai, T. Ohiwa, Toshiba Corporation, Japan |
| 2:40pm | PS1-TuA3 Effect of UV-wavelength on Hardening Process of Porogen-containing and Porogen-free Ultra-low-k PECVD Glasses A.M. Urbanowicz, K. Vanstreels, P. Verdonck, E. Van Besien, Ch. Trompoukis, D. Shamiryan, S. De Gendt, M.R. Baklanov, IMEC, Belgium |
| 3:00pm | PS1-TuA4 CF3I for Low-k Etching: Overcoming Current Technology Limitations V. Omarjee, American Air Liquide – Delaware Research and Technology Center, A.G. Gildea, E. Eisenbraun, The University at Albany-SUNY, N. Stafford, F. Doniat, C. Dussarrat, American Air Liquide – Delaware Research and Technology Center |
| 4:00pm | PS1-TuA7 Challenges in sub-100nm Dual Damascene Etch of Porous Oxycarbosilane Ultra Low-k Dielectrics for BEOL Integration R.L. Bruce, S.U. Engelmann, S. Purushothaman, IBM T.J. Watson Research Center, T.J. Frot, IBM Almaden Research Center, M. Darnon, M. Lofaro, S. Cohen, IBM T.J. Watson Research Center, W. Volksen, T.P. Magbitang, L. Krupp, G. Dubois, IBM Almaden Research Center |
| 4:20pm | PS1-TuA8 Mechanism of Highly Selective SiO2 Etching over Photoresist Using New Alternative Gas, C5HF7 Y. Miyawaki, Y. Kondo, K. Takeda, K. Ishikawa, M. Sekine, H. Kondo, Nagoya University, Japan, A. Ito, M. Nakamura, Zeon Corporation, Japan, M. Hori, Nagoya University, Japan |
| 4:40pm | PS1-TuA9 Etch Characteristics of SiO2 in the CxFy Dual-Frequency Capacitive Coupled Plasma M.H. Jeon, S.K. Kang, J.Y. Park, G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
| 5:00pm | PS1-TuA10 Ultra-high Selectivity Silicon Nitride Liner Etch: Mitigating Substrate Damage in Logic-based Contact Level Interconnects A. Metz, H. Cottle, Y. Chiba, P. Biolsi, TEL Technology Center America, M. Luo, E. Geiss, Global Foundries, S.H. Sung, Samsung Electronics, M. Aminpur, R. Wise, IBM Microelectronics |
| 5:20pm | PS1-TuA11 Achieving Lithographically Independent sub-35nm Vias for Phase Change Memory Applications E.A. Joseph, R. Dasaka, M. Breitwisch, A.G. Schrott, C.H. Lam, IBM T.J. Watson Research Center |
| 5:40pm | PS1-TuA12 The Evaluation of Sidewall Polymerization during Platinum Dry Etching Process using Inductively Coupled Cl2/O2/Ar and CH3OH Plasmas J.Y. Moon, J.W. Park, M.S. Lee, B.G. Jyun, W.J. Choi, S.H. Cho, J.S. Roh, S.-K. Park, HYNIX Semiconductor Inc., Republic of Korea |