| AVS 57th International Symposium & Exhibition | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-MoM1 Invited Paper Plasma Processes Challenges for Porous SiOCH Patterning in Advanced Interconnects N. Posseme, CEA-LETI-MINATEC, France, T. Chevolleau, CNRS-LTM, France, T. David, CEA-LETI-MINATEC, France, M. Darnon, CNRS-LTM, France, F. Bailly, R. Bouyssou, J. Ducote, C. Verove, STMicroelectronics, France, O. Joubert, CNRS-LTM, France |
| 9:00am | PS-MoM3 TiN Selectivity Improvement by DC Voltage Effect in a DC+ Dual Frequency Capacitive Coupled Plasma Etcher M. Nishino, M. Honda, Y. Ooya, R. Shimizu, Tokyo Electron AT Limited, Japan |
| 9:20am | PS-MoM4 RIE Process Challenges in sub 30nm node Trench First Metal Hard Mask Scheme K. Zin, Y. Feurprier, Y. Chiba, H. Kida, Tokyo Electron Limited, M. Ishikawa, Toshiba America Electronic Components, Y. Mignot, STMicroelectronics, Y. Yin, IBM Systems and Technology Group |
| 9:40am | PS-MoM5 BEOL Double Patterning: Challenges for Etch Y. Yin, J.C. Arnold, M. Colburn, S. Burns, S. Holmes, C. Koay, IBM Systems and Technology Group, R. Kim, Global Foundries, G. Landie, STMicroelectronics, D. Horak, IBM Systems and Technology Group, Y. Mignot, STMicroelectronics, H. Tomizawa, Toshiba Corporation |
| 10:40am | PS-MoM8 Film Diffusivity-Dependent Role of VUV/O2 and Ar+ Ions in SiCOH Ultra-low-k Dielectric Films J. Lee, D.B. Graves, University of California, Berkeley |
| 11:00am | PS-MoM9 Oxygen Containing Photoresist Ashing Chemistries with Less Damage to Low-k Films R. Gupta, N. Stafford, C. Dussarrat, V. Omarjee, Air Liquide |
| 11:20am | PS-MoM10 Ultra-low k Integration Challenges and Plasma Etch Solutions For 22nm Node Y. Zhou, Z. Cui, J. Pender, S. Nemani, M. Naik, Applied Materials Inc. |
| 11:40am | PS-MoM11 Highly Selective Etching of SiOCH over SiC Films by Dual Frequency CCP with DC Bias Superimposed to Upper Electrode T. Yamaguchi, K. Takeda, Nagoya University, Japan, C. Koshimizu, Tokyo Electron AT Limited, Japan, H. Kondo, K. Ishikawa, M. Sekine, M. Hori, Nagoya University, Japan |