| AVS 52nd International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-MoA1 Advanced Gate Stack Etch Modeling for 65 nm Node P.J. Stout, M. Shroff, T. Stephens, J.E. Vasek, O.O. Adetutu, S. Rauf, P. Ventzek, Freescale Semiconductor, Inc. |
| 2:20pm | PS2-MoA2 Investigation of Gate Oxide Behavior during Highly Selective Poly-Si Gate Etching for Triple Gate Transistors D. Kim, H.S. Lee, S.J. Park, Y.J. Jee, K.K. Chi, C.J. Kang, H.K. Cho, J.T. Moon, Samsung Electronics, South Korea |
| 2:40pm | PS2-MoA3 Invited Paper Silicon Etching Beyond the 90nm Technology Node: the Need for Total Parameter Flexibility A.M. Paterson, T. Panagopoulos, T.J. Kropewnicki, V. Todorow, A. Matyushkin, B. Hatcher, S. Pamarthy, N. Gani, A. Khan, S. Deshmukh, M. Shen, T. Lill, J.P. Holland, Applied Materials |
| 3:20pm | PS2-MoA5 Silicon Gate Etching using Amorphous Carbon Hard Mask F. Lazzarino, CNRS/LTM, France, P. Gouraud, STMicroelectronics, France, T. Chevolleau, B. Pelissier, G. Cunge, L. Vallier, O. Joubert, CNRS/LTM, France, T. Lill, Applied Materials |
| 3:40pm | PS2-MoA6 Atomic Scale Etching of Poly-Si in Inductively Coupled Ar and He Plasmas J.-H. Min, S.H. Moon, Seoul National University, Korea, Y.W. Kim, FOI Korea Corporation, Korea, C.B. Shin, C.-K. Kim, Ajou University, Korea |
| 4:00pm | PS2-MoA7 Spectroscopic and Real-Time Study of Ar@sup +@ and XeF@sub 2@ Etching of Si(100) by Second Harmonic Generation A.A.E. Stevens, P.M. Gevers, J.J.H. Gielis, M.C.M. Van De Sanden, W.M.M. Kessels, H.C.W. Beijerinck, Eindhoven University of Technology, The Netherlands |
| 4:20pm | PS2-MoA8 Optimization of Cryogenic Processes with Plasma Diagnostics T. Tillocher, R. Dussart, X. Mellhaoui, P. Lefaucheux, N. Mekkakia Maaza, GREMI - Université d'Orléans, France, M. Boufnichel, ST Microlectronics, L.J. Overzet, University of Texas at Dallas, P. Ranson, GREMI - Université d'Orléans, France |
| 4:40pm | PS2-MoA9 The Role of the Reaction Products in the Silicon Etching Cryogenic Process R. Dussart, X. Mellhaoui, GREMI - Universit@aa e@ d'Orleans, France, T. Tillocher, GREMI, France, P. Lefaucheux, N. Mekkakia Maaza, GREMI - Universit@aa e@ d'Orleans, France, M. Boufnichel, ST Microelectronics, France, L.J. Overzet, Univ. of Texas at Dallas, P. Ranson, GREMI - Universit@aa e@ d'Orleans, France |
| 5:00pm | PS2-MoA10 The Characterization of Silicon Trench Etching in a High Density Reactor Using Self-Excited Electron Resonance Spectroscopy (SEERS) F.C. Session, Fairchid Semiconductor |