| AVS 49th International Symposium | |
| Plasma Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-ThA1 Etching Reaction Mechanism of Organic Low-k Dielectric Employing High-Density Plasmas and Multi-Beams M. Hori, H. Nagai, Nagoya University, Japan, M. Hiramatsu, Meijo University, Japan, T. Goto, Nagoya University, Japan |
| 2:20pm | PS-ThA2 Modeling Dual Inlaid Feature Construction P.J. Stout, S. Rauf, T. Sparks, D. Zhang, P.L.G. Ventzek, Motorola |
| 2:40pm | PS-ThA3 Profile Evolution During Fluorocarbon Plasma Etching of Low-k Porous Silica@footnote 1@ A. Sankaran, M.J. Kushner, University of Illinois at Urbana-Champaign |
| 3:00pm | PS-ThA4 The Effect of Aspect Ratio on the Etching Properties of Porous Low-k Material in Fluorocarbon Plasma S.H. Moon, S.-W. Hwang, G.-R. Lee, J.-H. Min, Seoul National University, Korea |
| 3:20pm | PS-ThA5 Etching of Porous Low-K Dielectric Films in Fluorocarbon Plasmas S.A. Rasgon, B.E. Goodlin, H.H. Sawin, Massaschusetts Institute of Technology |
| 3:40pm | PS-ThA6 Plasma Etching Chemistry and Kinetics for Low-k and Porous Low-k Dielectric Films W. Jin, Massachusetts Institute of Technology |
| 4:00pm | PS-ThA7 In Situ Real Time Monitoring of Evaporation Induced Self-Assembly and Patterned Etching of Low-k Mesoporous SiO@sub 2@ in Fluorocarbon Plasmas H. Gerung, C.J. Brinker, S. Han, University of New Mexico |
| 4:20pm | PS-ThA8 The Control of the Etching of SiOCH Films using C@sub 4@F@sub 8@/Ar/N@sub 2@ Plasma T. Tatsumi, Sony Corporation, Japan, K. Urata, Sony Computer Entertainment, Japan, K. Nagahata, Sony Corporation, Japan, S. Iseda, Sony Computer Entertainment, Japan, Y. Morita, Sony Corporation, Japan |
| 4:40pm | PS-ThA9 SiO@sub 2@ Etch Lag in SiO@sub 2@/SiLK@super TM@/SiO@sub 2@ Stack Structures A. Hasegawa, K. Ohira, T. Mizutani, Fujitsu Limited, Japan, K. Higuchi, Fujitsu Vlsi Limited, Japan, M. Okamoto, M. Nakaishi, K. Nakagawa, Fujitsu Limited, Japan |
| 5:00pm | PS-ThA10 Etch Process Development of Porous Low-k Dielectrics for Dual Damascene Copper Interconnects K.D. Brennan, Texas Instruments, J.M. Jacobs, Philips, P.J. Wolf, Intel |