AVS 49th International Symposium
    Plasma Science Thursday Sessions
       Session PS-ThA

Paper PS-ThA2
Modeling Dual Inlaid Feature Construction

Thursday, November 7, 2002, 2:20 pm, Room C-103

Session: Dielectric Etch II
Presenter: P.J. Stout, Motorola
Authors: P.J. Stout, Motorola
S. Rauf, Motorola
T. Sparks, Motorola
D. Zhang, Motorola
P.L.G. Ventzek, Motorola
Correspondent: Click to Email
A reactor/feature physics based modeling suite has been applied to dual inlaid (DI) via first trench last (VFTL) feature construction. The reactor model is HPEM (developed at the University of Illinois) and the feature model is Papaya (developed at Motorola). Papaya, a 2D/3D Monte Carlo based feature scale model, includes physical effects of transport to surface, specular and diffusive reflection from surface, adsorption, surface diffusion, deposition, sputtering, etching, and crystal structure. Papaya is coupled to the reactor model through "atomic sources". The atomic sources are the identity, flux rate, angular distribution, and energy distribution of specie incident on the feature surface. The atomic sources are used by the feature model to predict feature evolution. The DI feature is used in inlaid copper interconnect construction to define metal lines and their connection to the metal layer below. The advantage of the DI feature is only one metallization step (barrier/seed/plating/CMP) is required to deposit metal into both the metal lines and the via connections to the metal layer below. The DI feature is constructed through a combination of etch, fill, and mask steps. Discussed will be the 3D feature modeling of flurocarbon plasma etching of vias and trenches in SiO@sub 2@ to construct a VFTL DI feature. The significant feature effects have been simulated for the interaction of trench etch and etched via profile and the via protect fill material. Effects of feature geometry, via protect material level, and polymerization thickness on the final 3D DI feature profile will be discussed.