IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Monday Sessions

Session TF-MoP
Multilayers and Thin Film Characterization Poster Session

Monday, October 29, 2001, 5:30 pm, Room 134/135


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

TF-MoP1
The Interfacial Reaction in the W/WN@sub x@/poly Si@sub 1-x@Ge@sub x@ with Ge Contents and Annealing Process
S.-K. Kang, J.J. Kim, D.-H. Ko, Yonsei University, Korea, H.B. Kang, Sungkyunkwan University, Korea, T.H. Ahn, I.S. Yeo, Hynix Semiconductor Inc., Korea, T.W. Lee, Y.H. Lee, Ju-Sung Eng., Korea
TF-MoP2
The Role of Interfaces in Fe/W and Co/W Multilayers
E. Majkova, A. Anopchenko, Y. Chushkin, M. Jergel, S. Luby, R. Senderak, Institute of Physics SAS, Slovak Republic
TF-MoP3
Intermixing Phenomena in Immiscible Ag/Co Bilayers and Co/Ag/Co Trilayers under KrF Laser Annealing
S. Luby, E. Majkova, M. Jergel, R. Senderak, Institute of Physics SAS, Slovak Republic, P. Mengucci, G. Majni, Uni. Ancona, Italy, E. D'Anna, G. Leggieri, A. Luches, M. Martino, Uni. Lecce, Italy
TF-MoP4
The Study of Growth of Al on Polyimide Free-standing Films
X.-F. Lin, Charles Evans & Associates, D.A. Grove, Luxel Corporation, T.F. Fister, L.P. Bisaha, G.S. Strossman, L.-C. Wei, Charles Evans & Associates, G. Lefever-Button, Luxel Corporation, J.R. Kingsley, I.D. Ward, R.W. Odom, P.M. Lindley, Charles Evans & Associates
TF-MoP5
Amorphous Silicon Photodiodes for Image Sensing
M. Ristova, Texas A&M University and University in Skopje, Republic of Macedonia, Y. Kuo, H.H. Lee, S. Lee, J.Y. Tewg, Texas A&M University
TF-MoP6
Li3PO4:N/LiCoO2 Coatings for Thin Film Batteries
M.E. Gross, P.M. Martin, D.C. Stewart, J.W. Johnston, C.F. Windisch, G.L. Graff, Pacific Northwest National Laboratory, P.L. Rissmiller, E.L. Dudeck, Mine Safety Appliances Company
TF-MoP8
Degradation Mechanisms of Low-Temperature Poly-Si Thin-Film Transistors with PECVD TEOS Oxide
H.W. Zan, P.S. Shih, T.C. Wu, National Chiao Tung University, Taiwan, T.C. Chang, National Sun Yat-Sen University, Taiwan, C.Y. Chang, D.Z. Peng, National Chiao Tung University, Taiwan
TF-MoP9
Atomic Force Microscopy Observation of TiO@sub2@ Films Deposited by dc Reactive Sputtering
T. Takahashi, H. Nakabayashi, N. Sasai, K. Masugata, Toyama University, Japan
TF-MoP10
Effects of Annealing Conditions on Doping Efficiency in the Indium Tin Oxide Thin Films Deposited at Low Temperature
J.W. Bae, S.D. Park, D.H. Lee, Y.J. Lee, G.Y. Yeom, Sungkyunkwan University, Korea
TF-MoP12
Electrical Properties for Si Doped Glass Light Emitter
T. Ichinohe, Tokyo National College of Technology, Japan, S. Nozaki, H. Morisaki, The University of Electro-Communications, Japan, S. Masaki, Tokyo National College of Technology, Japan, K. Kawasaki, TDY Co. Ltd., Japan
TF-MoP14
Characterization of Pb(Zr@sub0.52@Ti@sub0.48@)O@sub3@ Films in the Thickness Range of 0.4-6.0µm Prepared by Pulsed Laser Deposition
M.C. Kim, Yonsei University, Korea, J.W. Choi, S.J. Yoon, H.J. Kim, Korea Institute of Science and Technology, K.Y. Yoon, Yonsei University, Korea
TF-MoP16
The Effect of the Process Parameters on the Electrical Properties of Ni-Cr-Al-Mn-Si Alloy Thin Films
B.J. Lee, Inha University, Korea, C.S. Kim, Korea Electronics Technology Institute, G.B. Park, Yuhan College, Korea, D.C. Lee, Inha University, Korea
TF-MoP17
Electrical Properties of the Novel Semiconductor Alloy Cu@sub x@Cd@sub 1-x@Te Prepared by rf Sputtering
E. Garnett-Ruiz, G. Torres-Delgado, O. Jiménez-Sandoval, R. Perez-Castanedo, P. Garcia-Jimenez, Cinvestav-IPN, Mexico, B.S. Chao, Energy Conversion Devices, S. Jiménez-Sandoval, Cinvestav-IPN, Mexico
TF-MoP18
Characterization of Hydrogenated Amorphous Germanium, a-Ge:H, Thin Films Deposited by a Low Pressure Hollow Cathode Plasma-jet Reactive Sputtering System
G. Pribil, R.J. Soukup, N.J. Ianno, University of Nebraska, Lincoln, Z. Hubicka, Academy of Sciences
TF-MoP19
Metal-insulator Transition in Ultrathin Copper Film Observed By Impedance Spectroscopy
X. Jin, Y. Zhou, Y.H. Hyun, T.-U. Nahm, C.O. Kim, Y.P. Lee, Hanyang University, Korea
TF-MoP20
In-situ Buried Multiquantum Well Structures Studied by Photoreflectance and Photoluminescence Spectroscopy
A. Perez-Centeno, M. Lopez-Lopez, M. Melendez-Lira, M. Tamura, CINVESTAV-IPN, Mexico, T. Ishikawa, OTL, Tsukuba, Japan