IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP1
The Interfacial Reaction in the W/WN@sub x@/poly Si@sub 1-x@Ge@sub x@ with Ge Contents and Annealing Process

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Multilayers and Thin Film Characterization Poster Session
Presenter: S.-K. Kang, Yonsei University, Korea
Authors: S.-K. Kang, Yonsei University, Korea
J.J. Kim, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
H.B. Kang, Sungkyunkwan University, Korea
T.H. Ahn, Hynix Semiconductor Inc., Korea
I.S. Yeo, Hynix Semiconductor Inc., Korea
T.W. Lee, Ju-Sung Eng., Korea
Y.H. Lee, Ju-Sung Eng., Korea
Correspondent: Click to Email
As CMOS device dimensions are continuously scaled down to achieve high performance, new gate structures with low resistivity materials are required to enhance the electrical properties. In order to reduce the resistivity of gate electrode materials, metal silicide/poly Si structures have been employed. However, with metal silicide/poly Si structures, it is difficult to obtain low gate resistance in a narrow gate line. As a low resistivity gate electrode, metal/barrier/poly Si or poly Si@sub 1-X@Ge@sub X@ gate stack is one of the candidates for the gate structures in the high performance CMOS-FET. In addition, poly Si@sub 1-X@Ge@sub X@ films have been suggested as a promising alternative to the poly-Si gate electrode for CMOS technology due to the low resistivity, variable workfunction, and compatibility with Si processes. In order to investigate the interfacial reactions in the W/WNx/Poly Si1-xGex structure, poly poly Si@sub 1-X@Ge@sub X@ films with 0%, 20%, and 60% Ge content were deposited using LPCVD (EUREKA 2000, Ju-Sung Co. Ltd.) on the 8in silicon wafers. Following the deposition process of poly Si@sub 1-X@Ge@sub X@, WNx and W films were deposited using sputtering method. To study the interfacial reactions in the W/WNx/Poly Si@sub 1-X@Ge@sub X@ with Ge contents in poly Si@sub 1-X@Ge@sub X@ and annealing process, the films were annealed at temperatures between 600°C and 900°C in N@sub 2@ ambient. The interfacial reactions in the W/WNx/poly Si@sub 1-X@Ge@sub X@ films were observed by AES, XPS, HR-TEM, and EDX. After annealing treatment, N composition decreased in WNx and the interfacial layer was formed between WNx and poly Si capping layer. The interfacial layer was expected to be composed of W, Si, Ge, and N by the analysis of XPS and EDX. In addition, the formation of interfacial layer with the increase of Ge contents in poly Si@sub 1-X@Ge@sub X@ will be discussed.