IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP17
Electrical Properties of the Novel Semiconductor Alloy Cu@sub x@Cd@sub 1-x@Te Prepared by rf Sputtering

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Multilayers and Thin Film Characterization Poster Session
Presenter: S. Jiménez-Sandoval, Cinvestav-IPN, Mexico
Authors: E. Garnett-Ruiz, Cinvestav-IPN, Mexico
G. Torres-Delgado, Cinvestav-IPN, Mexico
O. Jiménez-Sandoval, Cinvestav-IPN, Mexico
R. Perez-Castanedo, Cinvestav-IPN, Mexico
P. Garcia-Jimenez, Cinvestav-IPN, Mexico
B.S. Chao, Energy Conversion Devices
S. Jiménez-Sandoval, Cinvestav-IPN, Mexico
Correspondent: Click to Email
It has been demonstrated that the incorporation of Cu into Cd sites at concentrations around 0.3 at% produces high quality films when compared to pure CdTe or to Cu@sub x@Cd@sub 1-x@Te with higher copper concentrations. The improvement on the structural properties produces an important effect on the transport properties of this semiconducting alloy. For instance, we have observed that the resistivity drops 4 to 8 orders of magnitude depending upon copper content. In this work we present the results of a study on the electrical properties of thin films, grown by rf sputtering, of the novel semiconductor alloy Cu@sub x@Cd@sub 1-x@Te as a function of copper concentration. This study is based on the current-voltage characteristics of a capacitor-like structure metal/semiconductor alloy/metal (suitable for measurement of polycrysdtalline materials) which allows to determine the values for electrical parameters when this structure is measured for different thicknesses of the semiconducting material.