IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP14
Characterization of Pb(Zr@sub0.52@Ti@sub0.48@)O@sub3@ Films in the Thickness Range of 0.4-6.0µm Prepared by Pulsed Laser Deposition

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Multilayers and Thin Film Characterization Poster Session
Presenter: M.C. Kim, Yonsei University, Korea
Authors: M.C. Kim, Yonsei University, Korea
J.W. Choi, Korea Institute of Science and Technology
S.J. Yoon, Korea Institute of Science and Technology
H.J. Kim, Korea Institute of Science and Technology
K.Y. Yoon, Yonsei University, Korea
Correspondent: Click to Email
The films of nominal composition of Pb(Zr@sub0.52@Ti@sub0.48@)O@sub3@ (PZT) in the thickness range of 0.4-6.0µm were fabricated on Pt/Ti/SiO@sub2@/Si substrate using a pulsed laser deposition (PLD). The PZT films were deposited at 500°C with single process and post annealed at 650°C in oxygen atmosphere because the deposition rate of PLD was fast. The variations in crystallite orientation, microstructure, and ferroelectric and dielectric properties were determined as a function of film thickness. The preferred orientation (111) was changed to (110) above the thickness of 8000Å. As film thickness increased, gain size increased and cross-sectional microstructure showed columnar structure. Remnant polarizations increased from 20 to 40µC/cm@super2@ approximately, and relative permittivity and coercive field decreased from 1800 to 1000 and 45 to 30KV/cm, respectively. The changes of property would be discussed in terms of the presumed influence of interfacial phenomena.