IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP19
Metal-insulator Transition in Ultrathin Copper Film Observed By Impedance Spectroscopy

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Multilayers and Thin Film Characterization Poster Session
Presenter: X. Jin, Hanyang University, Korea
Authors: X. Jin, Hanyang University, Korea
Y. Zhou, Hanyang University, Korea
Y.H. Hyun, Hanyang University, Korea
T.-U. Nahm, Hanyang University, Korea
C.O. Kim, Hanyang University, Korea
Y.P. Lee, Hanyang University, Korea
Correspondent: Click to Email
Ultrathin Cu films with a thickness of 0.3- 9 nm were thermally evaporated on a glass at room temperature in an ultrahigh vacuum chamber. The simultaneous in-situ monitoring of the complex impedance spectrum and the electrical resistance of the growing films was carried out. A metal-insulator transition was observed at a percolation onset thickness of 2.5 nm. The complex impedance of the films could be described by a parallel R-C equivalent circuit when the film thickness is smaller than the percolation onset thickness. With the further growth of film, the complex impedance undergoes a transition to an inductive equivalent circuit. A change in the electrical resistance at the percolation onset thickness follows a scaling law R ~ (d-d@sub c@)@super -t@ where t is an exponent, and are consistent with the observed transition.