IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP12
Electrical Properties for Si Doped Glass Light Emitter

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Multilayers and Thin Film Characterization Poster Session
Presenter: T. Ichinohe, Tokyo National College of Technology, Japan
Authors: T. Ichinohe, Tokyo National College of Technology, Japan
S. Nozaki, The University of Electro-Communications, Japan
H. Morisaki, The University of Electro-Communications, Japan
S. Masaki, Tokyo National College of Technology, Japan
K. Kawasaki, TDY Co. Ltd., Japan
Correspondent: Click to Email
Nanometer-sized Si ultrafine particle films (the Si nano-structured films) have been studied extensively as a candidate of Si-based photo-electronic coupled devices. Some of the authors have discussed the emission mechanism of the visible light emission and others have emphasized the possibility on the application to light emitters, although the emission intensity of the Si nano-structured films still remains to be quite low at present. The correlation between the light emission and the carrier injection mechanism in the Si nano-structured films should be clarified to realize Si based light emitter. We have studied both photoluminescence (PL) and electroluminescence (EL) of the Si doped glass (Si-DG) films fabricated by the ion beam sputter-deposition. The transmission electron microscopic(TEM) study has shown that the presence of nano-crystalline Si particles formed by annealing at 900 °C in nitrogen-gas atmosphere is essential for the visible light emission. PL spectra have been influenced by the excitation light energy, indicating that the emission is via the emission centers distributed in the interface between the crystallites and the surrounding SiO@sub 2@. EL devices with indium-tin-oxide (ITO) top electrodes have shown the emission peak at 650 nm, which is considerably longer than the PL peaks between 520 and 580 nm. The EL devices have shown the luminescence only when the diode is in forward bias, that is, the Si back contact is positive to the ITO top electrode. The integrated intensity increases almost in proportion to the injection current. When the forward bias voltage exceeded 5 V, EL became to be strong enough to be noticed with the naked eye in dark. We noticed that EL spectra tend to become broad with increasing current. C-V measurement has shown that the reverse bias characteristics are explained by the MOS-like structure with the flat band potential of about -4V.