AVS 47th International Symposium | |
Processing at the Nanoscale/NANO 6 | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
NS+NANO6-WeP1 Nanometer Atomic Layer Growth and Removal from Surfaces of Inorganic Single Crystals: Scanning Probe Microscope Studies Under Controlled Solutions J.T. Dickinson, R. Hariadi, S.C. Langford, Washington State University |
NS+NANO6-WeP2 Attractive Mode Molecular Manipulation at Room Temperature M.J. Humphry, P.H. Beton, P. Moriarty, University of Nottingham, UK |
NS+NANO6-WeP3 Manipulation of Single Cu-TBPP Molecules by Low Temperature STM F. Moresco, G. Meyer, K.H. Rieder, FU Berlin, Germany, H. Tang, A. Gourdon, C. Joachim, CEMES CNRS Toulouse, France |
NS+NANO6-WeP4 Nanolithography on Silicon Surface using a Tuning-fork STM/AFM S.Y. Lin, S.C. Yang, J.-D. Su, D.P. Tsai, National Taiwan University, F.S.-S. Chien, S. Gwo, National Tsing-Hua University, Taiwan, W.-F. Hsieh, National Chiao-Tung University, Taiwan |
NS+NANO6-WeP5 Etching of GaN (0001) with Halogens: Pit Growth and Step Etching by Cl K.S. Nakayama, S. Kuwano, Q.Z. Xue, Tohoku University, Japan, Q.K. Xue, Chinese Academy of Science, T. Sakurai, Tohoku University, Japan |
NS+NANO6-WeP6 Adsorption of Benzene and Pentacene on Metal Surface: A Scanning Tunneling Microscope Study J.-Y. Park, Y.-J. Song, Y. Kuk, Seoul National University, Korea |
NS+NANO6-WeP7 Substrate-Directed Self-Assembly of Rigid Metallodendrimers J.C. Poler, University of North Carolina, Charlotte |
NS+NANO6-WeP8 Amino-Terminated Self-Assembled Monolayer on SiO@sub 2@ Surfaces Formed by Chemical Vapor Deposition A. Hozumi, National Industrial Research Institute of Nagoya, Japan, H. Sugimura, Graduate School of Nagoya University, Japan, Y. Yokogawa, National Industrial Research Institute of Nagoya, Japan, K. Hayashi, Graduate School of Nagoya University, Japan, T. Kameyama, National Industrial Research Institute of Nagoya, Japan, O. Takai, Graduate School of Nagoya University, Japan |
NS+NANO6-WeP9 Formation of Ferroelectric Nano-domains using Scanning Force Microscopy for the Mass Storage System H. Shin, Samsung Advanced Institute of Technology & CRI, Korea, J.G. Shin, S. Hong, J.U. Jeon, Samsung Advanced Institute of Technology, Korea, J. Woo, K. No, Korea Advanced Institute of Science and Technology |
NS+NANO6-WeP10 Nanostrands of Poly(carbamatepropylsiloxane) on SiO2 Observed with Atomic Force Microscopy H. Celio, H. Cabibil, J. Lozano, J.M. White, University of Texas at Austin |
NS+NANO6-WeP11 Solution Deposition and Surface Characterization of Supported Gold Clusters C.C. Chusuei, X. Lai, K.A. Davis, P.S. Bagus, D.W. Goodman, M.A. Omary, M.A. Rawashdeh-Omary, Texas A&M University |
NS+NANO6-WeP12 Optical and Structural Properties of Ball Milled Produced Small Si Particles Embedded into a Sol-Gel Matrix F.J. Espinoza-Beltrán, L.L. Díaz-Flores, J.M. Yañez-Limón, CINVESTAV-IPN, México, J. Morales-Hernández, Programa de Posgrado de Ingeniería, UAQ, México, A. Mendoza-Galván, J. González-Hernández, CINVESTAV-IPN, México |
NS+NANO6-WeP13 Fabrication of a Si Nanosize Pillar Array using Modified He/Cl2 Plasma Etching Process J.W. Kim, M.Y. Jung, D.W. Kim, S.S. Choi, Sun Moon University, Korea |
NS+NANO6-WeP14 A Novel Low Temperature Synthesis Route for Silicon Nanowires S. Sharma, M. Sunkara, University of Louisville, E.C. Dickey, University of Kentucky, R. Miranda, University of Louisville |
NS+NANO6-WeP15 Fabrication of a Nanosize Oxide Aperture Array Coated with Thin Metal Films J.W. Lee, J.W. Kim, M.Y. Jung, D.W. Kim, S.S. Choi, Sun Moon University, Korea |
NS+NANO6-WeP16 Resolution Enhancement in Kelvin Probe Force Microscopy R. Shikler, O. Kazael, Y. Rosenwaks, Tel-Aviv University, Israel |
NS+NANO6-WeP17 Effect of Beam Parameters in Electron Beam Induced Deposition of Rhodium from a Carbon Free Precursor: A Systematic Study F. Cicoira, I. Utke, P. Hoffmann, B. Dwir, K. Leifer, E. Kapon, D. Laub, H.J. Mathieu, Swiss Federal Institute of Technology Lausanne, Switzerland, P. Doppelt, Ecole Superieure de Physique et Chimie Industrielle, Switzerland |