AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions

Session NS+NANO6-WeP
Poster Session

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

NS+NANO6-WeP1
Nanometer Atomic Layer Growth and Removal from Surfaces of Inorganic Single Crystals: Scanning Probe Microscope Studies Under Controlled Solutions
J.T. Dickinson, R. Hariadi, S.C. Langford, Washington State University
NS+NANO6-WeP2
Attractive Mode Molecular Manipulation at Room Temperature
M.J. Humphry, P.H. Beton, P. Moriarty, University of Nottingham, UK
NS+NANO6-WeP3
Manipulation of Single Cu-TBPP Molecules by Low Temperature STM
F. Moresco, G. Meyer, K.H. Rieder, FU Berlin, Germany, H. Tang, A. Gourdon, C. Joachim, CEMES CNRS Toulouse, France
NS+NANO6-WeP4
Nanolithography on Silicon Surface using a Tuning-fork STM/AFM
S.Y. Lin, S.C. Yang, J.-D. Su, D.P. Tsai, National Taiwan University, F.S.-S. Chien, S. Gwo, National Tsing-Hua University, Taiwan, W.-F. Hsieh, National Chiao-Tung University, Taiwan
NS+NANO6-WeP5
Etching of GaN (0001) with Halogens: Pit Growth and Step Etching by Cl
K.S. Nakayama, S. Kuwano, Q.Z. Xue, Tohoku University, Japan, Q.K. Xue, Chinese Academy of Science, T. Sakurai, Tohoku University, Japan
NS+NANO6-WeP6
Adsorption of Benzene and Pentacene on Metal Surface: A Scanning Tunneling Microscope Study
J.-Y. Park, Y.-J. Song, Y. Kuk, Seoul National University, Korea
NS+NANO6-WeP7
Substrate-Directed Self-Assembly of Rigid Metallodendrimers
J.C. Poler, University of North Carolina, Charlotte
NS+NANO6-WeP8
Amino-Terminated Self-Assembled Monolayer on SiO@sub 2@ Surfaces Formed by Chemical Vapor Deposition
A. Hozumi, National Industrial Research Institute of Nagoya, Japan, H. Sugimura, Graduate School of Nagoya University, Japan, Y. Yokogawa, National Industrial Research Institute of Nagoya, Japan, K. Hayashi, Graduate School of Nagoya University, Japan, T. Kameyama, National Industrial Research Institute of Nagoya, Japan, O. Takai, Graduate School of Nagoya University, Japan
NS+NANO6-WeP9
Formation of Ferroelectric Nano-domains using Scanning Force Microscopy for the Mass Storage System
H. Shin, Samsung Advanced Institute of Technology & CRI, Korea, J.G. Shin, S. Hong, J.U. Jeon, Samsung Advanced Institute of Technology, Korea, J. Woo, K. No, Korea Advanced Institute of Science and Technology
NS+NANO6-WeP10
Nanostrands of Poly(carbamatepropylsiloxane) on SiO2 Observed with Atomic Force Microscopy
H. Celio, H. Cabibil, J. Lozano, J.M. White, University of Texas at Austin
NS+NANO6-WeP11
Solution Deposition and Surface Characterization of Supported Gold Clusters
C.C. Chusuei, X. Lai, K.A. Davis, P.S. Bagus, D.W. Goodman, M.A. Omary, M.A. Rawashdeh-Omary, Texas A&M University
NS+NANO6-WeP12
Optical and Structural Properties of Ball Milled Produced Small Si Particles Embedded into a Sol-Gel Matrix
F.J. Espinoza-Beltrán, L.L. Díaz-Flores, J.M. Yañez-Limón, CINVESTAV-IPN, México, J. Morales-Hernández, Programa de Posgrado de Ingeniería, UAQ, México, A. Mendoza-Galván, J. González-Hernández, CINVESTAV-IPN, México
NS+NANO6-WeP13
Fabrication of a Si Nanosize Pillar Array using Modified He/Cl2 Plasma Etching Process
J.W. Kim, M.Y. Jung, D.W. Kim, S.S. Choi, Sun Moon University, Korea
NS+NANO6-WeP14
A Novel Low Temperature Synthesis Route for Silicon Nanowires
S. Sharma, M. Sunkara, University of Louisville, E.C. Dickey, University of Kentucky, R. Miranda, University of Louisville
NS+NANO6-WeP15
Fabrication of a Nanosize Oxide Aperture Array Coated with Thin Metal Films
J.W. Lee, J.W. Kim, M.Y. Jung, D.W. Kim, S.S. Choi, Sun Moon University, Korea
NS+NANO6-WeP16
Resolution Enhancement in Kelvin Probe Force Microscopy
R. Shikler, O. Kazael, Y. Rosenwaks, Tel-Aviv University, Israel
NS+NANO6-WeP17
Effect of Beam Parameters in Electron Beam Induced Deposition of Rhodium from a Carbon Free Precursor: A Systematic Study
F. Cicoira, I. Utke, P. Hoffmann, B. Dwir, K. Leifer, E. Kapon, D. Laub, H.J. Mathieu, Swiss Federal Institute of Technology Lausanne, Switzerland, P. Doppelt, Ecole Superieure de Physique et Chimie Industrielle, Switzerland