AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeP

Paper NS+NANO6-WeP10
Nanostrands of Poly(carbamatepropylsiloxane) on SiO2 Observed with Atomic Force Microscopy

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: H. Celio, University of Texas at Austin
Authors: H. Celio, University of Texas at Austin
H. Cabibil, University of Texas at Austin
J. Lozano, University of Texas at Austin
J.M. White, University of Texas at Austin
Correspondent: Click to Email
Poly(organosiloxane) polymers have recently received considerable attention due to their potential use as dielectric materials in advanced microelectronic applications. Using atomic force microscopy (AFM) and various spectroscopic methods (XPS, IR, Raman, SIMS), we have investigated the formation of linear strands of poly(carbamatepropylsiloxane) polymer (CPS) of nanoscale dimensions supported on native silicon oxide of Si(100). The CPS nanostructures were fabricated by the hydrolysis of @gamma@-aminopropylethoxysilane (@gamma@-APS) in a basic aqueous solution containing 3 @gamma@-APS: 1 K+ and excess CO@sub 2@. The CPS is deposited on SiO@sub 2@ by a spincoating procedure. The CPS nanostrands have lengths greater than 1000 nm, heights between 2 to 3 nm and widths on the average of ~10 nm. These strands are stable under ambient conditions for weeks. The linear directionality of these structures is dependent on the following parameters: 1) K+ cations, 2) strong hydrogen bonding interactions between propyl-NHCOO- and -NH@sub 2@ groups. The former is responsible for the formation of linear Si-O-Si backbone and neutralization of the carbamate (NHCOO-) group, while the latter is responsible for the self-assembly of CPS strands.