AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeP

Paper NS+NANO6-WeP4
Nanolithography on Silicon Surface using a Tuning-fork STM/AFM

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: S.Y. Lin, National Taiwan University
Authors: S.Y. Lin, National Taiwan University
S.C. Yang, National Taiwan University
J.-D. Su, National Taiwan University
D.P. Tsai, National Taiwan University
F.S.-S. Chien, National Tsing-Hua University, Taiwan
S. Gwo, National Tsing-Hua University, Taiwan
W.-F. Hsieh, National Chiao-Tung University, Taiwan
Correspondent: Click to Email
A tapping-mode atomic force microscope (AFM)/scanning tunneling microscope (STM) system using a non-optical tuning fork force-sensing method has been developed for the scanning probe lithography. Comparing with the nano-lithography done by the AFM having the conductive cantilever tip, our method has the following advantages: (1) It has longer tapered length STM tip and smaller half cone angle to perform the nanometer scale patterning with high aspect ratio. (2) Its low cost tungsten or Pt/Ir STM tip can be easily fabricated and attached to our AFM force-sensing tuning fork. (3) It can be easily adapted to large-scale parallel processing because of the all-electric force-sensing method. Nanostructures with high aspect ratios and large depths have been successfully performed on the silicon surfaces by using our AFM/STM nano-patterning system followed by the differential etching process. Lines with different widths and matrix of dots with various diameters were demonstrated for potential applications.