AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeP

Paper NS+NANO6-WeP15
Fabrication of a Nanosize Oxide Aperture Array Coated with Thin Metal Films

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.W. Lee, Sun Moon University, Korea
Authors: J.W. Lee, Sun Moon University, Korea
J.W. Kim, Sun Moon University, Korea
M.Y. Jung, Sun Moon University, Korea
D.W. Kim, Sun Moon University, Korea
S.S. Choi, Sun Moon University, Korea
Correspondent: Click to Email
There have been considerable interests about the fabrication of the nano-size hole due to the potential application of the near field optical sensor or liquid metal ionsource. The 2 micron size dot array was initially patterned. After formation of the V-groove shape by anisotropic etching, dry oxidation was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma system was performed in order to etch 90 nm silicon dioxide layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy on the bottom substrater would enhance the anisotropic etching by the Cl2 gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be 130 nm by scanning electron microscopy. After bulk micromachining from the backside Si wafer, the etched oxide aperture will be coated with metal thin film in order to improve the light trasmittance efficiency.