AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeP

Paper NS+NANO6-WeP1
Nanometer Atomic Layer Growth and Removal from Surfaces of Inorganic Single Crystals: Scanning Probe Microscope Studies Under Controlled Solutions

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.T. Dickinson, Washington State University
Authors: J.T. Dickinson, Washington State University
R. Hariadi, Washington State University
S.C. Langford, Washington State University
Correspondent: Click to Email
Using the tip of a Scanning Force Microscope in solutions with controlled ionic content, we combine the application of single asperity forces to aquous surfaces of inorganic single crystals. With appropriate combinations of reactivity and stress, we are able to locally remove or deposit crystalline material in atomic layers and dimensions of nanometers. We show for the first time that layer by layer crystal growth can be controlled mechanically in such a fashion that fills in micron-sized features a few atomic layers deep. The recrystallization is done under supersaturated solution conditions. Step edges are stimulated with low contact force scanning using a scanning force microscope (which is also used to image the changes in surface topography. We present recent results on single crystal brushite (CaHPO@sub4@.2H@sub2@O) where we find strong dependencies on solution chemistry, mechanical parameters (e.g., normal force), and step crystallography. A model for both material removal and deposition will be presented. These studies allow production of nanoscale structures and atomically flat surfaces under low temperature conditions.