AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeP

Paper NS+NANO6-WeP13
Fabrication of a Si Nanosize Pillar Array using Modified He/Cl2 Plasma Etching Process

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.W. Kim, Sun Moon University, Korea
Authors: J.W. Kim, Sun Moon University, Korea
M.Y. Jung, Sun Moon University, Korea
D.W. Kim, Sun Moon University, Korea
S.S. Choi, Sun Moon University, Korea
Correspondent: Click to Email
We have studied the effect of He flow rate on the dry etching process of Si and SiO2 layers using chlorine-based plasma. Experiments were performed using reactive ion etching system in order to fabricate a nanosize Si structure. The ion damage on the etch mask during etching process would hinder deeper and controllable etch profile. Rather than Ar gas, a He feed gas with Chlorine etch gas was exploited in order to reduce the ion damage. We have examined various etching characteristics of the He/Cl2 plasma and applied to fabrication of a Si pillar arrays. In this study, the fabrication of the Si pillar array with 5 micrometer height was successfully fabricated with 500 nm thickness electron beam resist only. We also fabricated the 10 micrometer deep Si trench with this modified He/Cl2 reactive ion etching system.