| AVS 46th International Symposium | |
| Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-MoP1 A-Si:H Film Deposition Using Plasma CVD with Suppression of Cluster-Size Particles M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe, Kyushu University, Japan |
| PS-MoP2 Surface Reactivities of Radicals in Fluorine Containing Plasmas C.I. Butoi, E.R. Fisher, Colorado State University |
| PS-MoP3 Studies on SiF@sub x@ Radicals in Fluorosilane Plasmas Used for Silicon Etching and Deposition K.L. Williams, C.I. Butoi, E.R. Fisher, Colorado State University |
| PS-MoP4 Boron Effects on SBT Etching with Ar/Cl@sub 2@/BCl@sub 3@ Plasma J.W. Seo, Chung Ang University, Korea, W.J. Lee, B.G. Yu, ETRI, Korea, K.H. Kwon, Hanseo University, Korea, G.Y. Yeom, Sung-Kyun-Kwan University, Korea, C.I. Kim, E.G. Chang, Chung-Ang University, Korea |
| PS-MoP5 Characterization of Inductively Coupled Discharges in C@sub 2@F@sub 6@ and CHF@sub 3@ G.A. Hebner, Sandia National Laboratories |
| PS-MoP7 Antennas for Large-Area, Inductively-Coupled Plasmas M.M. Patterson, A.E. Wendt, University of Wisconsin, Madison |
| PS-MoP8 Optical Emission and Mass Spectroscopic Studies of Reactive Species in an ICP Based Neutral Source for Ashing Processes X.M. Tang, D.M. Manos, College of William and Mary |
| PS-MoP9 Estimation of Surface Kinetic Parameters and 2D Simulation of InP Pattern Features during CH@sub 4@-H@sub 2@ Plasma Etching A. Rhallabi, L. Houlet, G. Turban, University of Nantes, France |
| PS-MoP10 Physical Characterization of the Etching of Low-k Hydrogen SilsesQuioxanes (HSQ) Dielectrics under Medium and High Density Plasma Conditions C.H. Low, H. Cong, P. Yelehanka, Chartered Semiconductor Manufacturing Limited, Singapore |
| PS-MoP11 Modeling and Experimental Characterization of a Ti/Nitrogen/Ar Ionized Physical Vapor Deposition Tool K. Tao, D. Mao, J. Hopwood, Northeastern University |
| PS-MoP12 Influence of Dry Etching Gas Chemistry on the Formation of Line Edge Roughness of Patterned Oxide Hard Mask A.S.-Y. Li, State University of New York at Albany |
| PS-MoP13 The Effect of Electrode Gap on CF@sub 2@ Distribution and Electrical Parameters in Fluorocarbon Plasmas K.L. Steffens, M.A. Sobolewski, National Institute of Standards and Technology |
| PS-MoP14 CF@sub x@ Radical and Etch Product Concentrations in Fluorocarbon Plasmas from Tunable Infrared Diode Laser Spectroscopy Y. Men, I.C. Abraham, R.C. Woods, University of Wisconsin, Madison |
| PS-MoP15 Comparison of Plasma Density Measurements in ICP and Helicon Discharges using Langmuir probe, Plasma Oscillation Probe and Interferometry Techniques W. Zawalski, Hiden Analytical Ltd., J.D. Evans, University of California, Los Angeles |
| PS-MoP16 The Characteristics of PZT Thin Film by Dry Etching as a Variation of Substrate Temperature T.H. An, C.I. Kim, E.G. Chang, Chung-Ang University, Korea |
| PS-MoP17 The Roles of N@sub 2@ Gas in Etching of Platinum by Inductively Coupled Ar/Cl@sub 2@/N@sub 2@ Plasmas J.H. Ryu, N.H. Kim, C.I. Kim, E.G. Chang, Chung-Ang University, Korea |
| PS-MoP18 Neutral Depletion and Transport Mechanisms in Large-Area High Density Plasma Sources S.M. Yun, K. Taylor, G.R. Tynan, University of California, San Diego |
| PS-MoP19 The Study on The Method of Plasma-Generated-Polymer Attachment to PR Side Wall for Forming Smaller Contact Hole K.I. Seo, J.S. Hwang, U.I. Chung, K.W. Kang, M.-Y. Lee, Samsung Electronic Co.Ltd., Korea |
| PS-MoP20 Etching Mechanism of (Ba,Sr)TiO@sub 3@ Films in High Density Cl@sub 2@/BCl@sub 3@/Ar Plasma S.B. Kim, Chung-Ang University, Korea, Y.H. Lee, Sung-Kyun-Kwan University, S.Korea, G.Y. Yeom, Sung-Kyun-Kwan University, Korea, T.H. Kim, Yeojoo Institute Technology, Korea, K.H. Kwon, Hanseo University, Korea, C.I. Kim, Chung-Ang University, Korea |
| PS-MoP21 Short Time Scale Instabilities of Ion Energies in an RF driven Fluorocarbon-Plasma G.J. Peter, N. Müller, H. Zogg, H. Oehre, Balzers Instruments, Principality of Liechtenstein |
| PS-MoP22 Influence of Electode-size and Finite Rise Time Effects on Plasma Sheath Expansion G.-H. Kim, Hanyang University, Korea, H.-S. Uhm, Ajou University, Korea, S.-Y. Rhee, Y.-W. Kim, Hanyang University, Korea, S.-H. Han, KIST, Korea, M.-P. Hong, Samsung Electronics, Korea |
| PS-MoP24 Diode Laser Spectroscopy of C@sub 2@F@sub 6@ Discharges in a GEC Reference Cell M.J. Barela, K.S. Waters, H.M. Anderson, University of New Mexico |
| PS-MoP25 Silicon Oxidation-Depth Enhancement Employing Negative Ion under Transformer Coupled RF Bias H. Shindo, Tokai University, Japan |
| PS-MoP26 Deceleration of Silicon Etch Rate at High Aspect Ratios J. Kiihamäki, VTT Electronics, Finland |
| PS-MoP28 Atomistic Simulations of Radical-Surface Interactions during Plasma-Enhanced Chemical Vapor Deposition of Si Films from Silane/Hydrogen Discharges S. Ramalingam, E.S. Aydil, D. Maroudas, University of California, Santa Barbara, S.P. Walch, NASA Ames Research Center |
| PS-MoP29 Hydrogen Desorption from Acid Attacked Titanium after DC Glow-discharge Treatment B.-O. Aronsson, University of Geneva, Switzerland, B. Hjorvarsson, Royal Institute of Technology, Sweden, P. Descouts, University of Geneva, Switzerland |
| PS-MoP31 Investigation of the TEOS Dissociation Coefficient by Electron Impact C. Vallee, A. Rhallabi, A. Granier, A. Goullet, G. Turban, University of Nantes, France |
| PS-MoP32 Electron Energy Control in Inductively Coupled Plasma Employing Multi-Mode Antenna H. Shindo, T. Urayama, Tokai University, Japan |
| PS-MoP33 Magnetized Inductively Coupled Plasma Etching of III-nitrides in Cl@sub 2@/BCl@sub 3@/O@sub 2@ and Cl@sub 2@/BCl@sub 3@/N@sub 2@ Y.H. Lee, Y.J. Sung, G.Y. Yeom, SungKyunKwan University, Korea, J.W. Lee, T.I. Kim, SAIT, Korea |
| PS-MoP34 Grid Interactions with a High Density Plasma Source J.E. Johannes, T.J. Bartel, Sandia National Laboratories, C.K. Kim, D. Ecnomou, University of Houston |
| PS-MoP35 Ultra-shallow n+/p and p+/n Junctions formed by Plasma Immersion Ion Implantation J.D. Bernstein, P.L. Kellerman, W. Krull, Yu. Erokhin, P. Frisella, Eaton Corp., M.J. Rendon, Motorola APRDL/Sematech |