AVS 46th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS-MoP

Paper PS-MoP17
The Roles of N@sub 2@ Gas in Etching of Platinum by Inductively Coupled Ar/Cl@sub 2@/N@sub 2@ Plasmas

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: J.H. Ryu, Chung-Ang University, Korea
Authors: J.H. Ryu, Chung-Ang University, Korea
N.H. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
E.G. Chang, Chung-Ang University, Korea
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Recently, much efforts has been expected on etching of platinum film, which is the candidate of electrode material in the capacitor structure for future DRAM and ferroelectric RAM (FRAM). One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. Therefore, the addition of N@sub 2@ gas to the Ar/Cl@sub 2@ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article,@footnote 1@, was performed. The selectivity of platinum film to oxide as an etch mask was increased with the addition of N@sub 2@ gas, and the steeper etch slope could be obtained. We interpreted these phenomena as the results of the blocking layer on the oxide mask shaped N-O and Si-N. And it was confirmed by TEM (transmission electron microscopy) and XPS (X-ray photoelectron spectroscopy) analysis. Moreover, it could be obtained the higher etch rate of platinum film. It was inspected that the more volatile compounds formed Pt-N were produced and the ion bombardment effects was increased. QMS (quadrupole mass spectrometry) and Langmuir probe were employed for each confirmation. @FootnoteText@ @footnote 1@ K. H. Kwon, C. I. Kim, S. J. Yun and G. Y. Yeom. "The Etching Properties of Pt Thin Films by Inductively Coupled Plasma", J. Vac. Sci. Technol. A 16(5), pp. 2772-2776, 1998.