AVS 46th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS-MoP

Paper PS-MoP16
The Characteristics of PZT Thin Film by Dry Etching as a Variation of Substrate Temperature

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: T.H. An, Chung-Ang University, Korea
Authors: T.H. An, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
E.G. Chang, Chung-Ang University, Korea
Correspondent: Click to Email
The Lead Zirconate Titanate PbZr@sub x@Ti@sub 1-x@O@sub 3@ (PZT) ferroelectric thin films have received a great attention for the application on nonvolatile memory, Infrared sensor, electro-optical device and microelectromechnical system device etc. In order to accomplish the integration of these device, the etching process for both PZT film and electrode material must be developed. In particular, much research of PZT ferroelectric films as a dielectric material for storage capacitors of highly integrated memory devices has been carried out since this films have a high dielectric constant and remanent polarization. However, there has been little study regarding the etching mechanisms of PZT material as a function of substrate temperature. Dry etching of PZT thin film was studied to examine the etching characteristics as a variations of substrate temperature. PZT films were deposited on Pt/Ti/SiO@sub 2@/Si substrates by sol-gel process. PZT thin films were etched with Cl@sub 2@/BCl@sub 3@/Ar gas combination in an inductively coupled plasma (ICP) by varying substrate temperature. Etching properties were investigated in terms of etch rate, etch selectivity, etch damage. To understand etching mechanism, Langmuir probe and Optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic, also X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS) analysis for film composition were utilized.